CRIS Current Research Information System

BACCARANI, GIORGIO
 Distribuzione geografica
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Continente #
NA - Nord America 19.944
AS - Asia 11.370
EU - Europa 8.199
AF - Africa 744
SA - Sud America 568
OC - Oceania 23
Continente sconosciuto - Info sul continente non disponibili 9
Totale 40.857
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Nazione #
US - Stati Uniti d'America 19.839
VN - Vietnam 3.568
SG - Singapore 2.847
CN - Cina 2.771
GB - Regno Unito 2.212
IT - Italia 1.219
DE - Germania 1.129
UA - Ucraina 789
HK - Hong Kong 718
SE - Svezia 711
IN - India 581
FR - Francia 569
RU - Federazione Russa 497
BR - Brasile 392
IE - Irlanda 326
JP - Giappone 251
CI - Costa d'Avorio 211
TG - Togo 190
ZA - Sudafrica 187
EE - Estonia 160
KR - Corea 154
NL - Olanda 99
BG - Bulgaria 93
FI - Finlandia 73
AR - Argentina 72
SC - Seychelles 72
JO - Giordania 65
CH - Svizzera 64
BE - Belgio 60
CA - Canada 59
BD - Bangladesh 49
PL - Polonia 49
PH - Filippine 46
TR - Turchia 42
TW - Taiwan 41
IQ - Iraq 39
TH - Thailandia 37
AT - Austria 34
ID - Indonesia 34
EC - Ecuador 32
NG - Nigeria 30
GR - Grecia 29
MX - Messico 28
ES - Italia 27
PK - Pakistan 21
AU - Australia 20
CL - Cile 19
UZ - Uzbekistan 17
LB - Libano 16
PY - Paraguay 16
SA - Arabia Saudita 16
MY - Malesia 15
CO - Colombia 13
CZ - Repubblica Ceca 12
VE - Venezuela 12
DZ - Algeria 9
HR - Croazia 9
EG - Egitto 8
LT - Lituania 8
IL - Israele 7
ET - Etiopia 6
JM - Giamaica 6
MA - Marocco 6
NP - Nepal 6
PE - Perù 6
RO - Romania 6
SI - Slovenia 6
TN - Tunisia 6
AE - Emirati Arabi Uniti 5
A2 - ???statistics.table.value.countryCode.A2??? 4
DK - Danimarca 4
EU - Europa 4
IR - Iran 4
KE - Kenya 4
KZ - Kazakistan 4
AM - Armenia 3
AZ - Azerbaigian 3
DO - Repubblica Dominicana 3
PS - Palestinian Territory 3
SN - Senegal 3
BO - Bolivia 2
BY - Bielorussia 2
CR - Costa Rica 2
GH - Ghana 2
LY - Libia 2
NZ - Nuova Zelanda 2
OM - Oman 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
SR - Suriname 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
AD - Andorra 1
AL - Albania 1
BH - Bahrain 1
BW - Botswana 1
CD - Congo 1
CV - Capo Verde 1
FJ - Figi 1
GE - Georgia 1
Totale 40.837
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Città #
Ann Arbor 6.884
Singapore 1.966
Southend 1.888
Fairfield 1.561
Ashburn 1.422
Wilmington 905
Ho Chi Minh City 798
Woodbridge 780
Chandler 753
Seattle 697
Hanoi 681
Hong Kong 680
Santa Clara 643
Houston 623
Jacksonville 544
San Jose 535
Cambridge 517
Princeton 447
Dong Ket 406
Hefei 351
Beijing 330
Dublin 326
Boardman 264
Abidjan 211
Tokyo 210
Nanjing 206
Lauterbourg 201
Westminster 201
Padova 200
Lomé 190
Bologna 188
Dallas 186
Los Angeles 158
Berlin 139
Turin 139
Medford 120
Mülheim 108
Jinan 107
Buffalo 106
Da Nang 104
Saint Petersburg 102
Milan 100
Shenyang 99
Haiphong 98
Seoul 92
Sofia 91
Changsha 85
San Diego 84
Guangzhou 74
Hebei 73
Frankfurt am Main 66
Tianjin 66
Amman 65
Nanchang 65
São Paulo 62
Redondo Beach 60
Bremen 59
Brussels 57
Mahé 56
Hyderabad 53
Shanghai 53
New York 52
Helsinki 50
Zhengzhou 47
Quận Bình Thạnh 45
Thái Nguyên 40
Biên Hòa 39
London 39
Hangzhou 38
Taiyuan 38
Bern 37
Hải Dương 37
Munich 36
Ha Long 34
The Dalles 34
Council Bluffs 33
Norwalk 33
Verona 33
Fremont 32
Orem 32
Can Tho 30
Des Moines 30
San Francisco 30
Abeokuta 29
Ningbo 29
Taizhou 29
Vũng Tàu 29
Dearborn 28
Haikou 28
Jiaxing 28
Bengaluru 27
Chennai 27
Lanzhou 27
Ninh Bình 27
Redwood City 26
San Venanzo 25
Amsterdam 24
Bắc Giang 24
Bắc Ninh 24
Genova 24
Totale 29.609
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.095
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 330
Application of the k ⋅ p Method to Device Simulation 305
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 289
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 288
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 279
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 276
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 276
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 275
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 273
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 273
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 268
TCAD modeling of charge transport in HV-IC encapsulation materials 267
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 266
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 266
Computational study of graphene nanoribbon FETs for RF applications 266
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 265
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 264
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 260
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 260
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 256
Analysis of HCS in STI-based LDMOS transistors 256
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 252
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 252
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 246
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 241
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 237
Band-Structure Effects in Ultrascaled Silicon Nanowires 236
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 230
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 230
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 229
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 228
Theoretical foundations of the quantum drift-diffusion and density-gradient models 227
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 226
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 226
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 225
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 225
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 224
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 224
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 223
Modeling approaches for band-structure calculation in III-V FET quantum wells 222
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 221
An investigation of performance limits of conventional and tunneling graphene-based transist 221
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 221
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 220
The density-gradient correction as a disguised pilot wave of de Broglie 219
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 219
Characterization and modeling of high-voltage LDMOS transistors 218
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 218
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 216
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 216
Computational study of the ultimate scaling limits of CNT tunneling devices 215
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 215
Impact of strain and interface traps on the performance of III-V nanowire TFETs 213
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 211
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 209
TFET-based inverter performance in the presence of traps and localized strain 209
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 208
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 208
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 207
Numerical investigation of the total SOA of trench field-plate LDMOS devices 207
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 207
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 205
High-frequency analog GNR-FET design criteria 203
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 202
Can Interface Traps Suppress TFET Ambipolarity? 202
Steep-slope devices: Prospects and challenges 202
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 201
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 201
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 201
A single-scan algorithm for connected components labelling in a traffic monitoring application 201
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 200
Optimization of GaSb/InAs TFET exploiting different strain configurations 200
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 199
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 199
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 199
TCAD study of DLC coatings for large-area high-power diodes 199
Leakage current and breakdown of GaN-on-Silicon vertical structures 198
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 198
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 197
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 197
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 196
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 196
Design guidelines for GaSb/InAs TFET exploiting strain and device size 195
TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs 195
Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD 194
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures 193
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 192
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects 192
Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs 192
Theoretical foundations of the quantum drift-diffusion and density-gradient models 191
Theoretical analyses and modeling for nanoelectronics 191
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k.p simulation 191
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 190
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs 190
Characterization and modeling of electrical stress degradation in STI-based integrated power devices 190
TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures 190
Theoretical analysis and modeling for nanoelectronics 190
Theory of the Junctionless Nanowire FET 189
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness 188
Totale 23.203
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Categoria #
all - tutte 95.843
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 95.843
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.180 0 0 0 0 0 0 0 0 0 161 179 840
2021/202210.373 418 145 1.296 1.167 1.360 1.053 1.100 1.032 1.145 315 554 788
2022/20234.085 424 655 210 502 253 246 127 174 747 67 416 264
2023/2024925 64 181 68 73 65 167 98 56 29 55 34 35
2024/20254.226 321 773 274 355 899 184 287 120 42 95 108 768
2025/20269.905 1.562 1.018 1.096 705 1.324 552 994 204 1.926 524 0 0
Totale 41.200