CRIS Current Research Information System

BACCARANI, GIORGIO
 Distribuzione geografica
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Continente #
NA - Nord America 20.521
AS - Asia 11.445
EU - Europa 8.257
AF - Africa 744
SA - Sud America 573
OC - Oceania 23
Continente sconosciuto - Info sul continente non disponibili 9
Totale 41.572
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Nazione #
US - Stati Uniti d'America 20.396
VN - Vietnam 3.568
SG - Singapore 2.870
CN - Cina 2.787
GB - Regno Unito 2.214
IT - Italia 1.266
DE - Germania 1.129
UA - Ucraina 789
HK - Hong Kong 727
SE - Svezia 711
IN - India 594
FR - Francia 572
RU - Federazione Russa 499
BR - Brasile 396
IE - Irlanda 326
JP - Giappone 251
CI - Costa d'Avorio 211
TG - Togo 190
ZA - Sudafrica 187
EE - Estonia 160
KR - Corea 156
NL - Olanda 99
BG - Bulgaria 93
AR - Argentina 73
FI - Finlandia 73
SC - Seychelles 72
CA - Canada 68
JO - Giordania 65
CH - Svizzera 64
BE - Belgio 61
BD - Bangladesh 56
PL - Polonia 49
PH - Filippine 46
TR - Turchia 42
TW - Taiwan 41
IQ - Iraq 39
TH - Thailandia 38
AT - Austria 34
ID - Indonesia 34
MX - Messico 33
EC - Ecuador 32
NG - Nigeria 30
GR - Grecia 29
ES - Italia 27
PK - Pakistan 21
AU - Australia 20
CL - Cile 19
UZ - Uzbekistan 17
LB - Libano 16
PY - Paraguay 16
SA - Arabia Saudita 16
MY - Malesia 15
CO - Colombia 13
CZ - Repubblica Ceca 12
VE - Venezuela 12
JM - Giamaica 10
DZ - Algeria 9
HR - Croazia 9
EG - Egitto 8
IL - Israele 8
LT - Lituania 8
IR - Iran 7
ET - Etiopia 6
MA - Marocco 6
NP - Nepal 6
PE - Perù 6
RO - Romania 6
SI - Slovenia 6
TN - Tunisia 6
AE - Emirati Arabi Uniti 5
A2 - ???statistics.table.value.countryCode.A2??? 4
DK - Danimarca 4
EU - Europa 4
KE - Kenya 4
KZ - Kazakistan 4
AM - Armenia 3
AZ - Azerbaigian 3
CR - Costa Rica 3
DO - Repubblica Dominicana 3
MD - Moldavia 3
PS - Palestinian Territory 3
SK - Slovacchia (Repubblica Slovacca) 3
SN - Senegal 3
BO - Bolivia 2
BY - Bielorussia 2
GH - Ghana 2
LY - Libia 2
NZ - Nuova Zelanda 2
OM - Oman 2
PT - Portogallo 2
SR - Suriname 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
AD - Andorra 1
AL - Albania 1
BH - Bahrain 1
BW - Botswana 1
BZ - Belize 1
CD - Congo 1
CV - Capo Verde 1
Totale 41.551
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Città #
Ann Arbor 6.884
Singapore 1.985
Southend 1.888
Fairfield 1.561
Ashburn 1.442
Wilmington 905
Ho Chi Minh City 798
Woodbridge 780
Chandler 753
San Jose 705
Seattle 700
Hong Kong 689
Hanoi 681
Santa Clara 651
Houston 626
Jacksonville 544
Cambridge 517
Princeton 447
Dong Ket 406
Hefei 351
Beijing 336
Dublin 326
Boardman 265
Abidjan 211
Tokyo 210
Nanjing 206
Lauterbourg 201
Westminster 201
Padova 200
Dallas 196
Bologna 192
Lomé 190
Los Angeles 163
Turin 141
Council Bluffs 140
Berlin 139
Medford 120
Buffalo 110
Milan 108
Mülheim 108
Jinan 107
Da Nang 104
Saint Petersburg 102
Shenyang 99
Haiphong 98
Seoul 92
Sofia 91
Changsha 85
San Diego 84
Guangzhou 74
Hebei 73
Frankfurt am Main 66
New York 66
Tianjin 66
Amman 65
Nanchang 65
São Paulo 64
Redondo Beach 60
Bremen 59
Brussels 57
Mahé 56
Shanghai 55
Hyderabad 53
Helsinki 50
Zhengzhou 47
Quận Bình Thạnh 45
Thái Nguyên 40
Biên Hòa 39
London 39
Hangzhou 38
Taiyuan 38
Bern 37
Hải Dương 37
Munich 36
Orem 36
San Francisco 36
The Dalles 35
Ha Long 34
Verona 34
Norwalk 33
Fremont 32
Des Moines 31
Can Tho 30
Abeokuta 29
Ningbo 29
Phoenix 29
Taizhou 29
Vũng Tàu 29
Dearborn 28
Haikou 28
Jiaxing 28
Bengaluru 27
Chennai 27
Lanzhou 27
Ninh Bình 27
Redwood City 26
Chicago 25
Pune 25
San Venanzo 25
Toronto 25
Totale 30.027
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.100
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 331
Application of the k ⋅ p Method to Device Simulation 316
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 293
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 292
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 282
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 281
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 279
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 279
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 275
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 275
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 271
TCAD modeling of charge transport in HV-IC encapsulation materials 271
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 269
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 269
Computational study of graphene nanoribbon FETs for RF applications 268
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 266
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 266
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 265
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 265
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 264
Analysis of HCS in STI-based LDMOS transistors 259
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 255
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 254
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 249
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 244
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 241
Band-Structure Effects in Ultrascaled Silicon Nanowires 241
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 238
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 233
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 233
Theoretical foundations of the quantum drift-diffusion and density-gradient models 232
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 232
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 231
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 229
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 229
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 228
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 228
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 228
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 227
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 227
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 225
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 224
Modeling approaches for band-structure calculation in III-V FET quantum wells 224
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 223
An investigation of performance limits of conventional and tunneling graphene-based transist 223
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 221
The density-gradient correction as a disguised pilot wave of de Broglie 220
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 220
Characterization and modeling of high-voltage LDMOS transistors 220
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 220
Computational study of the ultimate scaling limits of CNT tunneling devices 219
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 218
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 217
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 215
Impact of strain and interface traps on the performance of III-V nanowire TFETs 214
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 213
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 213
TFET-based inverter performance in the presence of traps and localized strain 212
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 210
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 210
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 209
Numerical investigation of the total SOA of trench field-plate LDMOS devices 209
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 209
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 208
Can Interface Traps Suppress TFET Ambipolarity? 208
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 206
High-frequency analog GNR-FET design criteria 205
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 204
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 203
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 203
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 203
Steep-slope devices: Prospects and challenges 203
A single-scan algorithm for connected components labelling in a traffic monitoring application 203
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k.p simulation 202
Theory of the Junctionless Nanowire FET 201
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 201
Leakage current and breakdown of GaN-on-Silicon vertical structures 201
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 201
Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD 200
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 200
Optimization of GaSb/InAs TFET exploiting different strain configurations 200
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 199
Design guidelines for GaSb/InAs TFET exploiting strain and device size 199
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 199
TCAD study of DLC coatings for large-area high-power diodes 199
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 198
TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs 198
Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs 197
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 196
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects 196
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures 194
Theoretical foundations of the quantum drift-diffusion and density-gradient models 194
TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures 193
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness 192
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 192
Theoretical analyses and modeling for nanoelectronics 192
Theoretical analyses and modeling for nanoelectronics 192
Band Effects on the transport characteristics of ultra-scaled SNW-FETs 191
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs 191
Totale 23.567
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Categoria #
all - tutte 100.697
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 100.697
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021840 0 0 0 0 0 0 0 0 0 0 0 840
2021/202210.373 418 145 1.296 1.167 1.360 1.053 1.100 1.032 1.145 315 554 788
2022/20234.085 424 655 210 502 253 246 127 174 747 67 416 264
2023/2024925 64 181 68 73 65 167 98 56 29 55 34 35
2024/20254.226 321 773 274 355 899 184 287 120 42 95 108 768
2025/202610.620 1.562 1.018 1.096 705 1.324 552 994 204 1.926 665 323 251
Totale 41.915