In this paper we perform a simulation study on the limits of graphene-nanoribbon field-effect transistors (GNR-FETs) for post-CMOS digital applications. Both conventional and tunneling FET architectures are considered. Simulations of conventional narrow GNR-FETs confirm the high potential of these devices, but highlight at the same time OFF-state leakage problems due to various tunneling mechanisms, which become more severe as the width is made larger and require a careful device optimization. Such OFF-state problems are partially solved by the tunneling FETs, which allow subthreshold slopes better than 60 mV/dec, at the price of a reduced ON-current. The importance of a very good control on edge roughness is highlighted by means of a direct simulation of devices with nonideal edges.

R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani (2009). An investigation of performance limits of conventional and tunneling graphene-based transist. JOURNAL OF COMPUTATIONAL ELECTRONICS, DOI 10.1007/s10825-009-0282-2, 1-10 [10.1007/s10825-009-0282-2].

An investigation of performance limits of conventional and tunneling graphene-based transist

GRASSI, ROBERTO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2009

Abstract

In this paper we perform a simulation study on the limits of graphene-nanoribbon field-effect transistors (GNR-FETs) for post-CMOS digital applications. Both conventional and tunneling FET architectures are considered. Simulations of conventional narrow GNR-FETs confirm the high potential of these devices, but highlight at the same time OFF-state leakage problems due to various tunneling mechanisms, which become more severe as the width is made larger and require a careful device optimization. Such OFF-state problems are partially solved by the tunneling FETs, which allow subthreshold slopes better than 60 mV/dec, at the price of a reduced ON-current. The importance of a very good control on edge roughness is highlighted by means of a direct simulation of devices with nonideal edges.
2009
R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani (2009). An investigation of performance limits of conventional and tunneling graphene-based transist. JOURNAL OF COMPUTATIONAL ELECTRONICS, DOI 10.1007/s10825-009-0282-2, 1-10 [10.1007/s10825-009-0282-2].
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/78445
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