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BACCARANI, GIORGIO

BACCARANI, GIORGIO  

CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"  

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Risultati 1 - 20 di 220 (tempo di esecuzione: 0.035 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Application of the k ⋅ p Method to Device Simulation Gnudi A.; Gnani E.; Reggiani S.; Baccarani G. 2023-01-01 - Springer Science and Business Media Deutschland GmbH 2.01 Capitolo / saggio in libro -
Memory devices – Volatile memories Gnani, Elena; Baccarani, Giorgio 2023-01-01 - Elsevier 2.05 Voce in dizionario o enciclopedia -
Memory devices—Non-volatile memories Gnani, Elena; Baccarani, Giorgio 2023-01-01 - Elsevier 2.05 Voce in dizionario o enciclopedia -
MOS Capacitors, MOS Transistors, and Charge-Transfer Devices Rudan M.; Reggiani S.; Baccarani G. 2023-01-01 - Springer Science and Business Media Deutschland GmbH 2.01 Capitolo / saggio in libro -
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska,... Jagoda; Vobecky, Jan; Tosi, Carlo 2021-01-01 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS - 1.01 Articolo in rivista TCAD_Investigation_of_Differently_Doped_DLC_Passivation_for_Large-Area_High-Power_Diodes.pdf
Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J. 2019-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
TFET inverter static and transient performances in presence of traps and localized strain Gnani E.; Visciarelli M.; Gnudi A.; Reggiani S.; Baccarani G. 2019-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents Cornigli, Davide*; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Fabiani, ...Davide; Varghese, Dhanoop; Tuncer, Enis; Krishnan, Srikanth; Nguyen, Luu 2018-01-01 IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION - 1.01 Articolo in rivista Characterization of dielectric properties_accepted_manuscript.pdf
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture Cornigli, D.*; Reggiani, S.; Gnudi, A.; Gnani, E.; Baccarani, G.; Fabiani, D.; Varghese, D.; Tunc...er, E.; Krishnan, S.; Nguyen, L. 2018-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista Microele_reliability_final_accepted1.pdf
TCAD study of DLC coatings for large-area high-power diodes Reggiani, S.; Balestra, L.; Gnudi, A.*; Gnani, E.; Baccarani, G.; Dobrzynska, J.; Vobecký, J.; To...si, C. 2018-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista -
TFET-based inverter performance in the presence of traps and localized strain Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.; Visciarelli, M. 2018-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Design guidelines for GaSb/InAs TFET exploiting strain and device size Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio 2017-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio 2017-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio 2017-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs Imperiale, Ilaria; Reggiani, Susanna; Pavarese, Giuseppe; Gnani, Elena; Gnudi, Antonio; Baccarani..., Giorgio; Ahn, Woojin; Alam, Muhammad A.; Varghese, Dhanoop; Hernandez-Luna, Alejandro; Nguyen, Luu; Krishnan, Srikanth 2017-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, Dav...id; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele 2016-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista Edit Comprehensive comparison.pdf
Impact of strain and interface traps on the performance of III-V nanowire TFETs Gnani, Elena; Visciarelli, Michele; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio 2016-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio 2016-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista PP Impact_of_Strain_on_Tunneling.pdf
Optimization of GaSb/InAs TFET exploiting different strain configurations Visciarelli, M.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G. 2016-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio 2016-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista -