This paper investigates the circuit-level performance of an inverter made by n- and p-type tunnel field-effect transistors (TFETs), integrated on the same InAs/Al0.05Ga0.95Sb technology platform, in the presence of interface traps and localized strain. From 3-D full-quantum simulations, interface traps are found to induce a significant degradation of the voltage gain, noise margin and transient performance. The effect of localized strain at the source/channel heterojunction caused by lattice mismatch, although beneficial, is unable to recover the circuit-level performance of the ideal case.

Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G., Visciarelli, M. (2018). TFET-based inverter performance in the presence of traps and localized strain. Institute of Electrical and Electronics Engineers Inc. [10.1109/ULIS.2018.8354726].

TFET-based inverter performance in the presence of traps and localized strain

Gnani, E.
;
Gnudi, A.;Reggiani, S.;Baccarani, G.;Visciarelli, M.
2018

Abstract

This paper investigates the circuit-level performance of an inverter made by n- and p-type tunnel field-effect transistors (TFETs), integrated on the same InAs/Al0.05Ga0.95Sb technology platform, in the presence of interface traps and localized strain. From 3-D full-quantum simulations, interface traps are found to induce a significant degradation of the voltage gain, noise margin and transient performance. The effect of localized strain at the source/channel heterojunction caused by lattice mismatch, although beneficial, is unable to recover the circuit-level performance of the ideal case.
2018
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
1
4
Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G., Visciarelli, M. (2018). TFET-based inverter performance in the presence of traps and localized strain. Institute of Electrical and Electronics Engineers Inc. [10.1109/ULIS.2018.8354726].
Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.; Visciarelli, M.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/669589
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact