REGGIANI, SUSANNA
REGGIANI, SUSANNA
DEI - DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"
Docenti di ruolo di Ia fascia
S. Reggian; S. Reggiani; Susanna Reggiani; REGGIANI S.
Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications
2025 Zunarelli, L.; Rotorato, S.; Gnani, E.; Reggiani, S.; Sankaralingam, R.; Dissegna, M.; Boselli, G.
TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
2025 Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S.
Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs
2024 Balestra, L.; Gnani, E.; Rossetti, M.; Depetro, R.; Reggiani, S.
Characterization and TCAD Simulation of the Electrostatic Potential Distortion in HV-ICs due to Losses in the Epoxy Mold Compound
2024 Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R.
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
2024 Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Posthuma, N.; Bakeroot, B.
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions
2023 Balestra L.; Cirioni L.; Cavallini A.; Reggiani S.; Rossetti M.; Gallo M.; Guarnera S.; Depetro R.
Application of the k ⋅ p Method to Device Simulation
2023 Gnudi A.; Gnani E.; Reggiani S.; Baccarani G.
Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation
2023 Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, Riccardo
MOS Capacitors, MOS Transistors, and Charge-Transfer Devices
2023 Rudan M.; Reggiani S.; Baccarani G.
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE
2023 Balestra L.; Ercolano F.; Gnani E.; Reggiani S.
TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection
2023 Zunarelli L.; Balestra L.; Reggiani S.; Sankaralingam R.; Dissegna M.; Boselli G.
Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors
2022 Giuliano, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Rossetti, M.; Depetro, R.; Croce, G.
Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure
2022 Balestra L.; Gnani E.; Reggiani S.
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations
2022 Balestra L.; Reggiani S.; Gnani E.; Gnudi A.
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon
2022 Balestra, L.; Reggiani, S.; Gnudi, A.; Gnani, E.; Dobrzynska, J.; Vobecky, J.
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells
2022 Zunarelli L.; Reggiani S.; Gnani E.; Sankaralingam R.; Dissegna M.; Boselli G.
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors
2022 Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.
Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors
2021 Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G.
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach
2021 Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemulapati
Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range
2021 Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications | Zunarelli, L.; Rotorato, S.; Gnani, E.; Reggiani, S.; Sankaralingam, R.; Dissegna, M.; Boselli, G. | 2025-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | - |
| TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs | Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reg...giani, S. | 2025-01-01 | POWER ELECTRONIC DEVICES AND COMPONENTS | - | 1.01 Articolo in rivista | 1-s2.0-S2772370425000057-main.pdf |
| Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs | Balestra, L.; Gnani, E.; Rossetti, M.; Depetro, R.; Reggiani, S. | 2024-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Characterization_and_TCAD_Modeling_of_the_Lateral_Space_Charge_Accumulation_in_Epoxy_Molding_Compound_in_Packaged_HV-ICs.pdf |
| Characterization and TCAD Simulation of the Electrostatic Potential Distortion in HV-ICs due to Losses in the Epoxy Mold Compound | Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R. | 2024-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current | Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Po...sthuma, N.; Bakeroot, B. | 2024-01-01 | - | Springer Science and Business Media Deutschland GmbH | 4.01 Contributo in Atti di convegno | SIE_2023_.pdf |
| Anomalous increase of leakage current in epoxy moulding compounds under wet conditions | Balestra L.; Cirioni L.; Cavallini A.; Reggiani S.; Rossetti M.; Gallo M.; Guarnera S.; Depetro R. | 2023-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | 1-s2.0-S0038110123001417-main.pdf |
| Application of the k ⋅ p Method to Device Simulation | Gnudi A.; Gnani E.; Reggiani S.; Baccarani G. | 2023-01-01 | - | Springer Science and Business Media Deutschland GmbH | 2.01 Capitolo / saggio in libro | - |
| Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation | Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, R...iccardo | 2023-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Teos_BD_Brief (6).pdf |
| MOS Capacitors, MOS Transistors, and Charge-Transfer Devices | Rudan M.; Reggiani S.; Baccarani G. | 2023-01-01 | - | Springer Science and Business Media Deutschland GmbH | 2.01 Capitolo / saggio in libro | - |
| TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE | Balestra L.; Ercolano F.; Gnani E.; Reggiani S. | 2023-01-01 | IEEE ACCESS | - | 1.01 Articolo in rivista | TCAD_Modeling_of_High-Field_Electron_Transport_in_Bulk_Wurtzite_GaN_The_Full-Band_SHE-BTE.pdf |
| TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection | Zunarelli L.; Balestra L.; Reggiani S.; Sankaralingam R.; Dissegna M.; Boselli G. | 2023-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors | Giuliano, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Rossetti, M.; Depetro, R.; Croce, G. | 2022-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | TEOS_7p_SSE_2021 (4).pdf |
| Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure | Balestra L.; Gnani E.; Reggiani S. | 2022-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | 215108_1_online.pdf |
| Group velocity of electrons in 4H-SiC from Density Functional Theory simulations | Balestra L.; Reggiani S.; Gnani E.; Gnudi A. | 2022-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | elsarticle_template.pdf |
| On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon | Balestra, L.; Reggiani, S.; Gnudi, A.; Gnani, E.; Dobrzynska, J.; Vobecky, J. | 2022-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | SSE_Balestra_2022.pdf |
| TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells | Zunarelli L.; Reggiani S.; Gnani E.; Sankaralingam R.; Dissegna M.; Boselli G. | 2022-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors | Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R. | 2022-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | Euro_SOI_SSE_4p (2).pdf |
| Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors | Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G. | 2021-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach | Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemu...lapati | 2021-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range | Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J. | 2021-01-01 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - | 1.01 Articolo in rivista | Influence_of_the_DLC_Passivation_Conductivity_on_the_Performance_of_Silicon_High-Power_Diodes_Over_an_Extended_Temperature_Range.pdf |