The performance of InGaAs based transistors can be significantly affected by the presence of interface traps, particularly in the subthreshold regime. In this study, the role of such defects has been investigated through the fabrication and the characterization of MOSCAP structures and nanosheet transistors. TCAD simulations have been used to extract interface-trap densities. Results reveal that the distributed defect tail into the bandgap is ∼5 × 1011 cm−2eV−1 and degrades the subthreshold slope of about 39%, while interface traps inside the conduction band limit gmMAX to 561 μS/μm. The study emphasizes the need for improved interface engineering to unlock the full potential of nanoscale InGaAs-based devices.
Balestra, L., Di Stasi, S., Gnani, E., Reggiani, S., Chen, M.-Y., Iwai, H., et al. (2026). Impact of interface traps on the subthreshold performance of InGaAs nanosheet transistors. SOLID-STATE ELECTRONICS, 231, 109265-1-109265-4 [10.1016/j.sse.2025.109265].
Impact of interface traps on the subthreshold performance of InGaAs nanosheet transistors
Balestra L.
;Di Stasi S.;Gnani E.;Reggiani S.;
2026
Abstract
The performance of InGaAs based transistors can be significantly affected by the presence of interface traps, particularly in the subthreshold regime. In this study, the role of such defects has been investigated through the fabrication and the characterization of MOSCAP structures and nanosheet transistors. TCAD simulations have been used to extract interface-trap densities. Results reveal that the distributed defect tail into the bandgap is ∼5 × 1011 cm−2eV−1 and degrades the subthreshold slope of about 39%, while interface traps inside the conduction band limit gmMAX to 561 μS/μm. The study emphasizes the need for improved interface engineering to unlock the full potential of nanoscale InGaAs-based devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
