GNANI, ELENA
GNANI, ELENA
DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"
Docenti di ruolo di IIa fascia
3D TCAD modeling of NO2CNT FET sensors
2018-01-01 Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hierold; Antonio Gnudi
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics
2005-01-01 M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport
2005-01-01 M. RUDAN; E. GNANI; S. REGGIANI; BACCARANI G.
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires
2007-01-01 M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations
2010-01-01 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani.
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles
2010-01-01 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films
2010-01-01 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs
2004-01-01 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique
2005-01-01 S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects
2007-01-01 E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani
A quantum mechanical analysis of the electrostatics in multiple-gate FETs
2005-01-01 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor
2011-01-01 E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani
An investigation of performance limits of conventional and tunneling graphene-based transist
2009-01-01 R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions
2009-01-01 E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani
An investigation on steep-slope and low-power nanowire FETs
2011-01-01 E. Gnani; P. Maiorano; S. Reggiani; A. Gnudi; G. Baccarani
Analysis of HCS in STI-based LDMOS transistors
2010-01-01 S. Reggiani; S. Poli; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs
2012-01-01 A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani
Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs
2012-01-01 A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools
2015-01-01 Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio
Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information
2004-01-01 E. Gnani; F. Ghidoni; M. Rudan
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| 3D TCAD modeling of NO2CNT FET sensors | Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hie...rold; Antonio Gnudi | 2018-01-01 | - | Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates | 4.01 Contributo in Atti di convegno | Carapezzi_CNT.pdf |
| A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics | M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI | 2005-01-01 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - | 1.01 Articolo in rivista | - |
| A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport | M. RUDAN; E. GNANI; S. REGGIANI; BACCARANI G. | 2005-01-01 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - | 1.01 Articolo in rivista | - |
| A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires | M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani | 2007-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani. | 2010-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2010-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2010-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2004-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique | S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. ...Denison; N. Jensen; G. Groos; M. Stecher | 2005-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
| A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects | E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani | 2007-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| A quantum mechanical analysis of the electrostatics in multiple-gate FETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2005-01-01 | - | IEEE EDS Japan Chapter | 4.01 Contributo in Atti di convegno | - |
| A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor | E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani | 2011-01-01 | - | s.n | 4.02 Riassunto (Abstract) | - |
| An investigation of performance limits of conventional and tunneling graphene-based transist | R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani | 2009-01-01 | JOURNAL OF COMPUTATIONAL ELECTRONICS | - | 1.01 Articolo in rivista | - |
| An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions | E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani | 2009-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| An investigation on steep-slope and low-power nanowire FETs | E. Gnani; P. Maiorano; S. Reggiani; A. Gnudi; G. Baccarani | 2011-01-01 | - | IEEE Publishing Services | 4.01 Contributo in Atti di convegno | - |
| Analysis of HCS in STI-based LDMOS transistors | S. Reggiani; S. Poli; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Se...etharaman | 2010-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs | A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani | 2012-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
| Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs | A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani | 2012-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools | Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Coll...aert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information | E. Gnani; F. Ghidoni; M. Rudan | 2004-01-01 | - | Springer | 4.01 Contributo in Atti di convegno | - |