GNANI, ELENA

GNANI, ELENA  

DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

Docenti di ruolo di IIa fascia  

Mostra records
Risultati 1 - 20 di 245 (tempo di esecuzione: 0.085 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N....; Bakeroot B. 2024-01-01 - Springer Science and Business Media Deutschland GmbH 4.01 Contributo in Atti di convegno -
Application of the k ⋅ p Method to Device Simulation Gnudi A.; Gnani E.; Reggiani S.; Baccarani G. 2023-01-01 - Springer Science and Business Media Deutschland GmbH 2.01 Capitolo / saggio in libro -
Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, R...iccardo 2023-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Memory devices – Volatile memories Gnani, Elena; Baccarani, Giorgio 2023-01-01 - Elsevier 2.05 Voce in dizionario o enciclopedia -
Memory devices—Non-volatile memories Gnani, Elena; Baccarani, Giorgio 2023-01-01 - Elsevier 2.05 Voce in dizionario o enciclopedia -
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE Balestra L.; Ercolano F.; Gnani E.; Reggiani S. 2023-01-01 IEEE ACCESS - 1.01 Articolo in rivista TCAD_Modeling_of_High-Field_Electron_Transport_in_Bulk_Wurtzite_GaN_The_Full-Band_SHE-BTE.pdf
Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure Balestra L.; Gnani E.; Reggiani S. 2022-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista 215108_1_online.pdf
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations Balestra L.; Reggiani S.; Gnani E.; Gnudi A. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista elsarticle_template.pdf
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells Zunarelli L.; Reggiani S.; Gnani E.; Sankaralingam R.; Dissegna M.; Boselli G. 2022-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista Euro_SOI_SSE_4p (2).pdf
Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G. 2021-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemu...lapati 2021-01-01 - - 4.01 Contributo in Atti di convegno -
Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools' Jungemann C.; Bonani F.; Cea S.M.; Gnani E.; Hong S.-M.; Jin S.; Liu X.; Moroz V.; Verhulst A. 2021-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J. 2021-01-01 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY - 1.01 Articolo in rivista Influence_of_the_DLC_Passivation_Conductivity_on_the_Performance_of_Silicon_High-Power_Diodes_Over_an_Extended_Temperature_Range.pdf
Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach Caruso E.; Esseni D.; Gnani E.; Lizzit D.; Palestri P.; Pin A.; Puglisi F.M.; Selmi L.; Zagni N. 2021-01-01 ELECTRONICS - 1.01 Articolo in rivista electronics-10-02472-v2.pdf
Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G. 2021-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Teos_Oxide_Modeling_merged POST PRINT.pdf
On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan 2021-01-01 - - 4.01 Contributo in Atti di convegno -
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska,... Jagoda; Vobecky, Jan; Tosi, Carlo 2021-01-01 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS - 1.01 Articolo in rivista TCAD_Investigation_of_Differently_Doped_DLC_Passivation_for_Large-Area_High-Power_Diodes.pdf