CRIS Current Research Information System

GNANI, ELENA

GNANI, ELENA  

DEI - DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

Docenti di ruolo di IIa fascia  

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Risultati 1 - 20 di 249 (tempo di esecuzione: 0.018 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications Zunarelli, L.; Rotorato, S.; Gnani, E.; Reggiani, S.; Sankaralingam, R.; Dissegna, M.; Boselli, G. 2025-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista -
Semi-analytical Model for the Estimation of the Subthreshold Swing in Dirac-Source FETs Ugolini, T.; Baccarani, G.; Gnani, E. 2025-01-01 - Springer 4.01 Contributo in Atti di convegno -
Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs Balestra, L.; Gnani, E.; Rossetti, M.; Depetro, R.; Reggiani, S. 2024-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Characterization_and_TCAD_Modeling_of_the_Lateral_Space_Charge_Accumulation_in_Epoxy_Molding_Compound_in_Packaged_HV-ICs.pdf
Characterization and TCAD Simulation of the Electrostatic Potential Distortion in HV-ICs due to Losses in the Epoxy Mold Compound Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R. 2024-01-01 - IEEE 4.01 Contributo in Atti di convegno -
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Po... espandisthuma, N.; Bakeroot, B. 2024-01-01 - Springer Science and Business Media Deutschland GmbH 4.01 Contributo in Atti di convegno SIE_2023_.pdf
Application of the k ⋅ p Method to Device Simulation Gnudi A.; Gnani E.; Reggiani S.; Baccarani G. 2023-01-01 - Springer Science and Business Media Deutschland GmbH 2.01 Capitolo / saggio in libro -
Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, R... espandiiccardo 2023-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Teos_BD_Brief (6).pdf
Memory devices – Volatile memories Gnani, Elena; Baccarani, Giorgio 2023-01-01 - Elsevier 2.05 Voce in dizionario o enciclopedia -
Memory devices—Non-volatile memories Gnani, Elena; Baccarani, Giorgio 2023-01-01 - Elsevier 2.05 Voce in dizionario o enciclopedia -
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE Balestra L.; Ercolano F.; Gnani E.; Reggiani S. 2023-01-01 IEEE ACCESS - 1.01 Articolo in rivista TCAD_Modeling_of_High-Field_Electron_Transport_in_Bulk_Wurtzite_GaN_The_Full-Band_SHE-BTE.pdf
Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors Giuliano, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Rossetti, M.; Depetro, R.; Croce, G. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista TEOS_7p_SSE_2021 (4).pdf
Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure Balestra L.; Gnani E.; Reggiani S. 2022-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista 215108_1_online.pdf
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations Balestra L.; Reggiani S.; Gnani E.; Gnudi A. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista elsarticle_template.pdf
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon Balestra, L.; Reggiani, S.; Gnudi, A.; Gnani, E.; Dobrzynska, J.; Vobecky, J. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista SSE_Balestra_2022.pdf
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells Zunarelli L.; Reggiani S.; Gnani E.; Sankaralingam R.; Dissegna M.; Boselli G. 2022-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista Euro_SOI_SSE_4p (2).pdf
Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G. 2021-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemu... espandilapati 2021-01-01 - - 4.01 Contributo in Atti di convegno -
Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools' Jungemann, C.; Bonani, F.; Cea, S. M.; Gnani, E.; Hong, S. -M.; Jin, S.; Liu, X.; Moroz, V.; Verh... espandiulst, A. 2021-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J. 2021-01-01 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY - 1.01 Articolo in rivista Influence_of_the_DLC_Passivation_Conductivity_on_the_Performance_of_Silicon_High-Power_Diodes_Over_an_Extended_Temperature_Range.pdf