GNANI, ELENA
Dettaglio
GNANI, ELENA
DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"
Docenti di ruolo di IIa fascia
Pubblicazioni
Risultati 1 - 20 di 222 (tempo di esecuzione: 0.0 secondi).
Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File | |
---|---|---|---|---|---|---|---|
1 | 3D TCAD modeling of NO2CNT FET sensors | Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hie...rold; Antonio Gnudi | 2018 | Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates | 4.01 Contributo in Atti di convegno | ||
2 | A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics | M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI | 2005 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 1.01 Articolo in rivista | - | |
3 | A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport | M. RUDAN; E. GNANI; S. REGGIANI; BACCARANI G. | 2005 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 1.01 Articolo in rivista | - | |
4 | A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires | M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani | 2007 | s.n | 4.01 Contributo in Atti di convegno | - | |
5 | A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani. | 2010 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1.01 Articolo in rivista | - | |
6 | A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2010 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1.01 Articolo in rivista | - | |
7 | A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2010 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1.01 Articolo in rivista | - | |
8 | A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2004 | s.n | 4.01 Contributo in Atti di convegno | - | |
9 | A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique | S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. ...Denison; N. Jensen; G. Groos; M. Stecher | 2005 | IEEE ELECTRON DEVICE LETTERS | 1.01 Articolo in rivista | - | |
10 | A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects | E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani | 2007 | s.n | 4.01 Contributo in Atti di convegno | - | |
11 | A quantum mechanical analysis of the electrostatics in multiple-gate FETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2005 | IEEE EDS Japan Chapter | 4.01 Contributo in Atti di convegno | - | |
12 | A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor | E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani | 2011 | s.n | 4.02 Riassunto (Abstract) | - | |
13 | An investigation of performance limits of conventional and tunneling graphene-based transist | R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani | 2009 | JOURNAL OF COMPUTATIONAL ELECTRONICS | 1.01 Articolo in rivista | - | |
14 | An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions | E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani | 2009 | s.n | 4.01 Contributo in Atti di convegno | - | |
15 | An investigation on steep-slope and low-power nanowire FETs | E. Gnani; P. Maiorano; S. Reggiani; A. Gnudi; G. Baccarani | 2011 | IEEE Publishing Services | 4.01 Contributo in Atti di convegno | - | |
16 | Analysis of HCS in STI-based LDMOS transistors | S. Reggiani; S. Poli; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Se...etharaman | 2010 | IEEE | 4.01 Contributo in Atti di convegno | - | |
17 | Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs | A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani | 2012 | IEEE ELECTRON DEVICE LETTERS | 1.01 Articolo in rivista | - | |
18 | Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs | A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani | 2012 | s.n | 4.01 Contributo in Atti di convegno | - | |
19 | Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools | Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Coll...aert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio | 2015 | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - | |
20 | Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information | E. Gnani; F. Ghidoni; M. Rudan | 2004 | Springer | 4.01 Contributo in Atti di convegno | - |