GNANI, ELENA

GNANI, ELENA  

DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

Docenti di ruolo di IIa fascia  

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Risultati 1 - 20 di 238 (tempo di esecuzione: 0.039 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
3D TCAD modeling of NO2CNT FET sensors Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hie...rold; Antonio Gnudi 2018-01-01 - Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates 4.01 Contributo in Atti di convegno Carapezzi_CNT.pdf
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI 2005-01-01 IEEE TRANSACTIONS ON NANOTECHNOLOGY - 1.01 Articolo in rivista -
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport M. RUDAN; E. GNANI; S. REGGIANI; BACCARANI G. 2005-01-01 IEEE TRANSACTIONS ON NANOTECHNOLOGY - 1.01 Articolo in rivista -
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani 2007-01-01 - s.n 4.01 Contributo in Atti di convegno -
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani. 2010-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani 2010-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani 2010-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs E. Gnani; S. Reggiani; M. Rudan; G. Baccarani 2004-01-01 - s.n 4.01 Contributo in Atti di convegno -
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. ...Denison; N. Jensen; G. Groos; M. Stecher 2005-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista -
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani 2007-01-01 - s.n 4.01 Contributo in Atti di convegno -
A quantum mechanical analysis of the electrostatics in multiple-gate FETs E. Gnani; S. Reggiani; M. Rudan; G. Baccarani 2005-01-01 - IEEE EDS Japan Chapter 4.01 Contributo in Atti di convegno -
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani 2011-01-01 - s.n 4.02 Riassunto (Abstract) -
An investigation of performance limits of conventional and tunneling graphene-based transist R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani 2009-01-01 JOURNAL OF COMPUTATIONAL ELECTRONICS - 1.01 Articolo in rivista -
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani 2009-01-01 - s.n 4.01 Contributo in Atti di convegno -
An investigation on steep-slope and low-power nanowire FETs E. Gnani; P. Maiorano; S. Reggiani; A. Gnudi; G. Baccarani 2011-01-01 - IEEE Publishing Services 4.01 Contributo in Atti di convegno -
Analysis of HCS in STI-based LDMOS transistors S. Reggiani; S. Poli; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Se...etharaman 2010-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani 2012-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista -
Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani 2012-01-01 - s.n 4.01 Contributo in Atti di convegno -
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Coll...aert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio 2015-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information E. Gnani; F. Ghidoni; M. Rudan 2004-01-01 - Springer 4.01 Contributo in Atti di convegno -