Titolo	Autore(i)	Anno	Periodico	Editore	Tipo
1	Vertical-Si-Nanowire-Based Nonvolatile Memory Devices With Improved Performance and Reduced Process Complexity	Y. Sun; H.Y. Yu; N. Singh; K.C. Leong; E. Gnani; G. Baccarani; G.Q. Lo; D.L. Kwong	2011	IEEE TRANSACTIONS ON ELECTRON DEVICES		1.01 Articolo in rivista
2	Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation	L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani	2008		s.n	4.01 Contributo in Atti di convegno
3	Total ionizing dose effects in si-based tunnel FETs	Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca; Royer, Cyrille Le; Paccagnella, Alessandro	2014	IEEE TRANSACTIONS ON NUCLEAR SCIENCE		1.01 Articolo in rivista
4	Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs	R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani	2009	SOLID-STATE ELECTRONICS		1.01 Articolo in rivista
5	Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs	R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani	2008		s.n	4.01 Contributo in Atti di convegno
6	Theory of the Junctionless UTB SOI-FET	Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani	2012		s.n	4.02 Riassunto (Abstract)
7	Theory of the Junctionless Nanowire FET	E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani	2011	IEEE TRANSACTIONS ON ELECTRON DEVICES		1.01 Articolo in rivista
8	Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio	Rudan M.; Reggiani S.; Gnani E.; Baccarani G.; Corvasce C.; Barlini D.; Ciappa M.; Fichtner W.; Denison M.; Jensen N.; Groos G.; Stecher M.	2006	IEEE TRANSACTIONS ON ELECTRON DEVICES		1.01 Articolo in rivista
9	Theoretical foundations of the quantum drift-diffusion and density-gradient models	G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan	2008	SOLID-STATE ELECTRONICS		1.01 Articolo in rivista
10	Theoretical foundations of the quantum drift-diffusion and density-gradient models	G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan	2007		s.n	4.01 Contributo in Atti di convegno
11	Theoretical Analysis of the Vertical LOCOS DMOS Transistor with Process-Induced Stress Enhancement	S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise	2009		s.n	4.01 Contributo in Atti di convegno
12	Theoretical Analysis of the Vertical LOCOS DMOS Transistor with Process-Induced Stress Enhancement	S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise	2010	SOLID-STATE ELECTRONICS		1.01 Articolo in rivista
13	Theoretical analysis and modeling for nanoelectronics	Baccarani, Giorgio; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna	2016	SOLID-STATE ELECTRONICS		1.01 Articolo in rivista
14	Theoretical analyses and modeling for nanoelectronics	Baccarani, G.; Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S.	2015		IEEE Computer Society	4.01 Contributo in Atti di convegno
15	Theoretical analyses and modeling for nanoelectronics	Baccarani, G.; Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S.	2015	PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE	Editions Frontieres	4.01 Contributo in Atti di convegno
16	The R-Sigma Approach to Tunneling in Nanoscale Devices	M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani	2006		Springer	4.01 Contributo in Atti di convegno
17	The R-Sigma Approach to Tunneling in Nanoscale Devices	M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani	2005		IEEE	4.01 Contributo in Atti di convegno
18	The density-gradient correction as a disguised pilot wave of de Broglie	M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI	2004		Springer	4.01 Contributo in Atti di convegno
19	TFET-based inverter performance in the presence of traps and localized strain	Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.; Visciarelli, M.	2018		Institute of Electrical and Electronics Engineers Inc.	4.01 Contributo in Atti di convegno
20	TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications	Emanuele, Baravelli; Elena, Gnani; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani	2014	IEEE TRANSACTIONS ON ELECTRON DEVICES		1.01 Articolo in rivista