High-voltage dielectric breakdown of thick amorphous silicon-dioxide capacitors for galvanic insulation have been recently investigated showing a significant difference under dc and ac stresses. The impact-ionization generation is expected to be the dominant mechanism for thicknesses from about 1 to 15 mu m. Significant degradation of the breakdown voltage is observed for ac stress, which requires a focused TCAD-based investigation to fully understand the involved physical mechanisms. Accurate TCAD predictions of the measured leakage current allow us to validate the proposed model gaining a detailed understanding of the device breakdown regime.
Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation / Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, Riccardo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 70:9(2023), pp. 4953-4957. [10.1109/ted.2023.3298310]
Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation
Giuliano, Federico
;Reggiani, Susanna;Gnani, Elena;Gnudi, Antonio;
2023
Abstract
High-voltage dielectric breakdown of thick amorphous silicon-dioxide capacitors for galvanic insulation have been recently investigated showing a significant difference under dc and ac stresses. The impact-ionization generation is expected to be the dominant mechanism for thicknesses from about 1 to 15 mu m. Significant degradation of the breakdown voltage is observed for ac stress, which requires a focused TCAD-based investigation to fully understand the involved physical mechanisms. Accurate TCAD predictions of the measured leakage current allow us to validate the proposed model gaining a detailed understanding of the device breakdown regime.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
