High-voltage dielectric breakdown of thick amorphous silicon-dioxide capacitors for galvanic insulation have been recently investigated showing a significant difference under dc and ac stresses. The impact-ionization generation is expected to be the dominant mechanism for thicknesses from about 1 to 15 mu m. Significant degradation of the breakdown voltage is observed for ac stress, which requires a focused TCAD-based investigation to fully understand the involved physical mechanisms. Accurate TCAD predictions of the measured leakage current allow us to validate the proposed model gaining a detailed understanding of the device breakdown regime.
Giuliano, F., Reggiani, S., Gnani, E., Gnudi, A., Rossetti, M., Depetro, R. (2023). Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 70(9), 4953-4957 [10.1109/ted.2023.3298310].
Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation
Giuliano, Federico
;Reggiani, Susanna;Gnani, Elena;Gnudi, Antonio;
2023
Abstract
High-voltage dielectric breakdown of thick amorphous silicon-dioxide capacitors for galvanic insulation have been recently investigated showing a significant difference under dc and ac stresses. The impact-ionization generation is expected to be the dominant mechanism for thicknesses from about 1 to 15 mu m. Significant degradation of the breakdown voltage is observed for ac stress, which requires a focused TCAD-based investigation to fully understand the involved physical mechanisms. Accurate TCAD predictions of the measured leakage current allow us to validate the proposed model gaining a detailed understanding of the device breakdown regime.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
