Design guidelines for Gr-MoS2 based DS-FETs

As the development of Dirac-Source Field-Effect Transistors (DS-FETs) progresses, there is an increasing need for a robust, flexible, and agile simulation framework capable of evaluating device performance across a range of operating conditions. This work addresses that need by coupling a two-dimensional (2D) Poisson solver with a quantum transport model under the ballistic transport regime. This simulation approach is employed to analyze the electrical characteristics of a DS-FET realized with the heterojunction of graphene and monolayer MoS2. In addition, the impact of gate-to-channel alignment on device performance is systematically investigated. Simulation results underscore the critical role of full gate overlap with the semiconducting region and substantiate the feasibility of DS-FETs based on these two materials.