The root causes for the anomalous Pf-tf scaling behavior in the adiabatic regime are identified for a BiCMOS-based ESD protection for the first time. TCAD is used both to understand the turn-on of the integrated architecture with two coupled bipolar transistors under different ESD pulses and to explore the main physical mechanisms leading to the thermal runaway and failure. Simulations clearly show the complex interaction between the conductance modulation and the onset of hot spots in the full volume of the device structure, leading to the identification of critical parameters for the optimization of the proposed ESD cell.
Zunarelli L., Reggiani S., Gnani E., Sankaralingam R., Dissegna M., Boselli G. (2022). TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells. Institute of Electrical and Electronics Engineers Inc. [10.1109/IRPS48227.2022.9764432].
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells
Zunarelli L.
;Reggiani S.;Gnani E.;
2022
Abstract
The root causes for the anomalous Pf-tf scaling behavior in the adiabatic regime are identified for a BiCMOS-based ESD protection for the first time. TCAD is used both to understand the turn-on of the integrated architecture with two coupled bipolar transistors under different ESD pulses and to explore the main physical mechanisms leading to the thermal runaway and failure. Simulations clearly show the complex interaction between the conductance modulation and the onset of hot spots in the full volume of the device structure, leading to the identification of critical parameters for the optimization of the proposed ESD cell.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
