In this entry, the most important non-volatile memories used for a wide variety of applications are presented, with detailed information on their structural and functional properties. The first part addresses charge-based memories, including read-only memories, electrically programmable read-only memories, electrically erasable and programmable read-only memories, and flash memories. In a broad sense, all them can be considered non-volatile read-only memories, meaning that reading the stored information can be performed in a relatively short time, but programming and erasing require much longer times, if at all possible. The second part of the presentation encompasses non-volatile memories which exhibit similar read/write (R/W) access times, and can thus be regarded as random-access memories to all effects. More specifically, we illustrate magnetic memories, ferroelectric memories, phase-change memories and resistive memories, and discuss their future market perspectives.
Gnani, E., Baccarani, G. (2023). Memory devices—Non-volatile memories. Amsterdam : Elsevier [10.1016/b978-0-323-90800-9.00236-5].
Memory devices—Non-volatile memories
Gnani, Elena
Primo
;Baccarani, GiorgioSecondo
2023
Abstract
In this entry, the most important non-volatile memories used for a wide variety of applications are presented, with detailed information on their structural and functional properties. The first part addresses charge-based memories, including read-only memories, electrically programmable read-only memories, electrically erasable and programmable read-only memories, and flash memories. In a broad sense, all them can be considered non-volatile read-only memories, meaning that reading the stored information can be performed in a relatively short time, but programming and erasing require much longer times, if at all possible. The second part of the presentation encompasses non-volatile memories which exhibit similar read/write (R/W) access times, and can thus be regarded as random-access memories to all effects. More specifically, we illustrate magnetic memories, ferroelectric memories, phase-change memories and resistive memories, and discuss their future market perspectives.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.