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BALESTRA, LUIGI

BALESTRA, LUIGI  

DEI - DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

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Risultati 1 - 20 di 22 (tempo di esecuzione: 0.051 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Impact of interface traps on the subthreshold performance of InGaAs nanosheet transistors Balestra, L.; Di Stasi, S.; Gnani, E.; Reggiani, S.; Chen, M. -Y.; Iwai, H.; Chang, E. Y. 2026-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reg...giani, S. 2026-01-01 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY - 1.01 Articolo in rivista -
Impact of water absorption on electrical properties of epoxy composite polymers: Suppressed charge trapping and enhanced ion transport Balestra, L.; Rossetti, M.; Gnani, E.; Reggiani, S. 2025-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista 025105_1_5.0263738.pdf
In-Package Measurements of Space-Charge Accumulation in Epoxy Mold Compound Through Silicon Integrated Charge Sensors Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R. 2025-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reg...giani, S. 2025-01-01 POWER ELECTRONIC DEVICES AND COMPONENTS - 1.01 Articolo in rivista 1-s2.0-S2772370425000057-main.pdf
Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs Balestra, L.; Gnani, E.; Rossetti, M.; Depetro, R.; Reggiani, S. 2024-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Characterization_and_TCAD_Modeling_of_the_Lateral_Space_Charge_Accumulation_in_Epoxy_Molding_Compound_in_Packaged_HV-ICs.pdf
Characterization and TCAD Simulation of the Electrostatic Potential Distortion in HV-ICs due to Losses in the Epoxy Mold Compound Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R. 2024-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Dielectric Breakdown of in-Package Epoxy Mold Compound under Wet and Dry Conditions: Frequency and Temperature dependence Balestra, L.; Riaz, M. T.; Giuliano, F.; Cavallini, A.; Reggiani, S.; Oldani, L.; Guarnera, S. S....; Rossetti, M.; Depetro, R. 2024-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions Balestra L.; Cirioni L.; Cavallini A.; Reggiani S.; Rossetti M.; Gallo M.; Guarnera S.; Depetro R. 2023-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista 1-s2.0-S0038110123001417-main.pdf
Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reg...giani, S. 2023-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno IIRW_Manuscript_Franco_Ercolano_Student_Paper 2.pdf
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE Balestra L.; Ercolano F.; Gnani E.; Reggiani S. 2023-01-01 IEEE ACCESS - 1.01 Articolo in rivista TCAD_Modeling_of_High-Field_Electron_Transport_in_Bulk_Wurtzite_GaN_The_Full-Band_SHE-BTE.pdf
TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection Zunarelli L.; Balestra L.; Reggiani S.; Sankaralingam R.; Dissegna M.; Boselli G. 2023-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure Balestra L.; Gnani E.; Reggiani S. 2022-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista 215108_1_online.pdf
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations Balestra L.; Reggiani S.; Gnani E.; Gnudi A. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista elsarticle_template.pdf
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon Balestra, L.; Reggiani, S.; Gnudi, A.; Gnani, E.; Dobrzynska, J.; Vobecky, J. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista SSE_Balestra_2022.pdf
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemu...lapati 2021-01-01 - - 4.01 Contributo in Atti di convegno -
Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J. 2021-01-01 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY - 1.01 Articolo in rivista Influence_of_the_DLC_Passivation_Conductivity_on_the_Performance_of_Silicon_High-Power_Diodes_Over_an_Extended_Temperature_Range.pdf
On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan 2021-01-01 - - 4.01 Contributo in Atti di convegno -
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska,... Jagoda; Vobecky, Jan; Tosi, Carlo 2021-01-01 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS - 1.01 Articolo in rivista TCAD_Investigation_of_Differently_Doped_DLC_Passivation_for_Large-Area_High-Power_Diodes.pdf
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation Luigi Balestra, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Jagoda Dobrzynska, Jan Vobecký 2020-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista FINAL_VERSION.pdf