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BALESTRA, LUIGI

BALESTRA, LUIGI  

DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

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Risultati 1 - 13 di 13 (tempo di esecuzione: 0.017 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions Balestra L.; Cirioni L.; Cavallini A.; Reggiani S.; Rossetti M.; Gallo M.; Guarnera S.; Depetro R. 2023-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista 1-s2.0-S0038110123001417-main.pdf
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE Balestra L.; Ercolano F.; Gnani E.; Reggiani S. 2023-01-01 IEEE ACCESS - 1.01 Articolo in rivista TCAD_Modeling_of_High-Field_Electron_Transport_in_Bulk_Wurtzite_GaN_The_Full-Band_SHE-BTE.pdf
TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection Zunarelli L.; Balestra L.; Reggiani S.; Sankaralingam R.; Dissegna M.; Boselli G. 2023-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure Balestra L.; Gnani E.; Reggiani S. 2022-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista 215108_1_online.pdf
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations Balestra L.; Reggiani S.; Gnani E.; Gnudi A. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista elsarticle_template.pdf
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J. 2022-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemu...lapati 2021-01-01 - - 4.01 Contributo in Atti di convegno -
Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J. 2021-01-01 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY - 1.01 Articolo in rivista Influence_of_the_DLC_Passivation_Conductivity_on_the_Performance_of_Silicon_High-Power_Diodes_Over_an_Extended_Temperature_Range.pdf
On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan 2021-01-01 - - 4.01 Contributo in Atti di convegno -
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska,... Jagoda; Vobecky, Jan; Tosi, Carlo 2021-01-01 IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS - 1.01 Articolo in rivista TCAD_Investigation_of_Differently_Doped_DLC_Passivation_for_Large-Area_High-Power_Diodes.pdf
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation Luigi Balestra, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Jagoda Dobrzynska, Jan Vobecký 2020-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista FINAL_VERSION.pdf
Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J. 2019-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
TCAD study of DLC coatings for large-area high-power diodes Reggiani, S.; Balestra, L.; Gnudi, A.*; Gnani, E.; Baccarani, G.; Dobrzynska, J.; Vobecký, J.; To...si, C. 2018-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista -