Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-Area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.

Balestra L., Reggiani S., Gnudi A., Gnani E., Baccarani G., Dobrzynska J., et al. (2019). Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers. Institute of Electrical and Electronics Engineers Inc. [10.1109/SISPAD.2019.8870354].

Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers

Balestra L.
;
Reggiani S.;Gnudi A.;Gnani E.;Baccarani G.;
2019

Abstract

Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-Area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.
2019
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
1
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Balestra L., Reggiani S., Gnudi A., Gnani E., Baccarani G., Dobrzynska J., et al. (2019). Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers. Institute of Electrical and Electronics Engineers Inc. [10.1109/SISPAD.2019.8870354].
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/728350
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