Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-Area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.

Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers

Balestra L.
;
Reggiani S.;Gnudi A.;Gnani E.;Baccarani G.;
2019

Abstract

Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-Area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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4
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/728350
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