Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-Area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.
Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers / Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J.. - ELETTRONICO. - 2019-:(2019), pp. 8870354.1-8870354.4. (Intervento presentato al convegno 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 tenutosi a Palazzo di Toppo Wassermann, ita nel 2019) [10.1109/SISPAD.2019.8870354].
Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers
Balestra L.
;Reggiani S.;Gnudi A.;Gnani E.;Baccarani G.;
2019
Abstract
Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-Area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
