The most relevant transport features of doped diamond-like carbon (DLC) films have been implemented in a TCAD setup to provide a theoretical tool to assess the reliability expectations for high-voltage device passivation. Starting from the band structure and boundary conditions of a metal-insulator-semiconductor (MIS) device, trap states in the bandgap have been used to determine the characteristics of differently doped DLC layers against experiments. The role of the DLC as a passivation layer on top of the bevel termination of a high-voltage diode has been studied and compared with experiments. The breakdown voltage is significantly influenced by the properties of the DLC as clearly explained by the TCAD simulation results.
Reggiani, S., Balestra, L., Gnudi, A., Gnani, E., Baccarani, G., Dobrzynska, J., et al. (2018). TCAD study of DLC coatings for large-area high-power diodes. MICROELECTRONICS RELIABILITY, 88-90, 1094-1097 [10.1016/j.microrel.2018.06.075].
TCAD study of DLC coatings for large-area high-power diodes
Reggiani, S.
;Balestra, L.;Gnudi, A.;Gnani, E.;Baccarani, G.;
2018
Abstract
The most relevant transport features of doped diamond-like carbon (DLC) films have been implemented in a TCAD setup to provide a theoretical tool to assess the reliability expectations for high-voltage device passivation. Starting from the band structure and boundary conditions of a metal-insulator-semiconductor (MIS) device, trap states in the bandgap have been used to determine the characteristics of differently doped DLC layers against experiments. The role of the DLC as a passivation layer on top of the bevel termination of a high-voltage diode has been studied and compared with experiments. The breakdown voltage is significantly influenced by the properties of the DLC as clearly explained by the TCAD simulation results.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
