REGGIANI, SUSANNA
REGGIANI, SUSANNA
DEI - DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"
Docenti di ruolo di Ia fascia
S. Reggian; S. Reggiani; Susanna Reggiani; REGGIANI S.
Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs
2024 Balestra, L.; Gnani, E.; Rossetti, M.; Depetro, R.; Reggiani, S.
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
2024 Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N.; Bakeroot B.
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions
2023 Balestra L.; Cirioni L.; Cavallini A.; Reggiani S.; Rossetti M.; Gallo M.; Guarnera S.; Depetro R.
Application of the k ⋅ p Method to Device Simulation
2023 Gnudi A.; Gnani E.; Reggiani S.; Baccarani G.
Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation
2023 Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, Riccardo
MOS Capacitors, MOS Transistors, and Charge-Transfer Devices
2023 Rudan M.; Reggiani S.; Baccarani G.
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE
2023 Balestra L.; Ercolano F.; Gnani E.; Reggiani S.
TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection
2023 Zunarelli L.; Balestra L.; Reggiani S.; Sankaralingam R.; Dissegna M.; Boselli G.
Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors
2022 Giuliano, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Rossetti, M.; Depetro, R.; Croce, G.
Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure
2022 Balestra L.; Gnani E.; Reggiani S.
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations
2022 Balestra L.; Reggiani S.; Gnani E.; Gnudi A.
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon
2022 Balestra, L.; Reggiani, S.; Gnudi, A.; Gnani, E.; Dobrzynska, J.; Vobecky, J.
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells
2022 Zunarelli L.; Reggiani S.; Gnani E.; Sankaralingam R.; Dissegna M.; Boselli G.
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors
2022 Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.
Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors
2021 Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G.
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach
2021 Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemulapati
Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range
2021 Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J.
Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators
2021 Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G.
On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon
2021 Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan
Space Charge Redistribution in Epoxy Mold Compounds of High-Voltage ICs at Dry and Wet Conditions: Theory and Experiment
2021 Ahn W.; Alam M.A.; Cornigli D.; Reggiani S.; Varghese D.; Krishnan S.