REGGIANI, SUSANNA

REGGIANI, SUSANNA  

DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

Docenti di ruolo di Ia fascia  

S. Reggian; S. Reggiani; Susanna Reggiani; REGGIANI S.  

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Risultati 1 - 20 di 271 (tempo di esecuzione: 0.025 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure A. Marchi; A. Bertoni; S. Reggiani; M. Rudan 2004-01-01 SEMICONDUCTOR SCIENCE AND TECHNOLOGY - 1.01 Articolo in rivista -
3D TCAD modeling of NO2CNT FET sensors Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hie...rold; Antonio Gnudi 2018-01-01 - Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates 4.01 Contributo in Atti di convegno Carapezzi_CNT.pdf
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI 2005-01-01 IEEE TRANSACTIONS ON NANOTECHNOLOGY - 1.01 Articolo in rivista -
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport M. RUDAN; E. GNANI; S. REGGIANI; BACCARANI G. 2005-01-01 IEEE TRANSACTIONS ON NANOTECHNOLOGY - 1.01 Articolo in rivista -
A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects Baccarani G.; Reggiani S. 1999-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B.... Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak 2009-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani 2007-01-01 - s.n 4.01 Contributo in Atti di convegno -
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps Visciarelli, Michele; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna 2016-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno -
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani. 2010-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani 2010-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani 2010-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs E. Gnani; S. Reggiani; M. Rudan; G. Baccarani 2004-01-01 - s.n 4.01 Contributo in Atti di convegno -
A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs Gnani E.; Reggiani S.; Rudan M.; Baccarani G. 2004-01-01 - - 4.01 Contributo in Atti di convegno -
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. ...Denison; N. Jensen; G. Groos; M. Stecher 2005-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista -
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani 2007-01-01 - s.n 4.01 Contributo in Atti di convegno -
A quantum mechanical analysis of the electrostatics in multiple-gate FETs E. Gnani; S. Reggiani; M. Rudan; G. Baccarani 2005-01-01 - IEEE EDS Japan Chapter 4.01 Contributo in Atti di convegno -
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G. 2014-01-01 - Bez, R; Pavan, P; Meneghesso, G; 4.01 Contributo in Atti di convegno -
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs Villani, F.; Gnani, E; Gnudi, A.; Reggiani, S.; Baccarani, G. 2015-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani 2011-01-01 - s.n 4.02 Riassunto (Abstract) -
A Schroedinger-Poisson Solution of CNT-FET Arrays A. Marchi; S. Reggiani; M. Rudan 2005-01-01 - IEEE EDS Japan Chapter 4.01 Contributo in Atti di convegno -