VISCIARELLI, MICHELE
VISCIARELLI, MICHELE
CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"
TFET inverter static and transient performances in presence of traps and localized strain
2019 Gnani, E.; Visciarelli, M.; Gnudi, A.; Reggiani, S.; Baccarani, G.
TFET-based inverter performance in the presence of traps and localized strain
2018 Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.; Visciarelli, M.
Design guidelines for GaSb/InAs TFET exploiting strain and device size
2017 Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform
2017 Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs
2017 Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD
2017 Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G.
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps
2016 Visciarelli, Michele; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
2016 Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
Impact of strain and interface traps on the performance of III-V nanowire TFETs
2016 Gnani, Elena; Visciarelli, Michele; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs
2016 Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
Optimization of GaSb/InAs TFET exploiting different strain configurations
2016 Visciarelli, M.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.
Modeling approaches for band-structure calculation in III-V FET quantum wells
2015 Caruso, Enrico; Zerveas, G.; Baccarani, Giorgio; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, M.; Markussen, T.; Palestri, P.; Schenk, A.; Selmi, L.; Sousa, M.; Stokbro, K.; Visciarelli, Michele
Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p
2015 Alper, Cem; Visciarelli, Michele; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Gnani, Elena; Ionescu, Adrian M.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| TFET inverter static and transient performances in presence of traps and localized strain | Gnani, E.; Visciarelli, M.; Gnudi, A.; Reggiani, S.; Baccarani, G. | 2019-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| TFET-based inverter performance in the presence of traps and localized strain | Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.; Visciarelli, M. | 2018-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Design guidelines for GaSb/InAs TFET exploiting strain and device size | Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio | 2017-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform | Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio | 2017-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs | Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio | 2017-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD | Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri,... P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G. | 2017-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| A full-quantum simulation study of InGaAs NW MOSFETs including interface traps | Visciarelli, Michele; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna | 2016-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | - |
| Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells | Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, Dav...id; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele | 2016-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | Edit Comprehensive comparison.pdf |
| Impact of strain and interface traps on the performance of III-V nanowire TFETs | Gnani, Elena; Visciarelli, Michele; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio | 2016-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs | Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio | 2016-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | PP Impact_of_Strain_on_Tunneling.pdf |
| Optimization of GaSb/InAs TFET exploiting different strain configurations | Visciarelli, M.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G. | 2016-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Modeling approaches for band-structure calculation in III-V FET quantum wells | Caruso, Enrico; Zerveas, G.; Baccarani, Giorgio; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, E...lena; Gnudi, Antonio; Grassi, Roberto; Luisier, M.; Markussen, T.; Palestri, P.; Schenk, A.; Selmi, L.; Sousa, M.; Stokbro, K.; Visciarelli, Michele | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p | Alper, Cem; Visciarelli, Michele; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Gnani, E...lena; Ionescu, Adrian M. | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |