In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics.

Alper, C., Visciarelli, M., Palestri, P., Padilla, J.L., Gnudi, A., Gnani, E., et al. (2015). Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p. Institute of Electrical and Electronics Engineers Inc. [10.1109/SISPAD.2015.7292312].

Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p

Visciarelli, Michele;Gnudi, Antonio;Gnani, Elena;
2015

Abstract

In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics.
2015
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
273
276
Alper, C., Visciarelli, M., Palestri, P., Padilla, J.L., Gnudi, A., Gnani, E., et al. (2015). Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p. Institute of Electrical and Electronics Engineers Inc. [10.1109/SISPAD.2015.7292312].
Alper, Cem; Visciarelli, Michele; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Gnani, Elena; Ionescu, Adrian M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/611464
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