In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics.
Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p / Alper, Cem; Visciarelli, Michele; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Gnani, Elena; Ionescu, Adrian M.. - ELETTRONICO. - 2015-:(2015), pp. 7292312.273-7292312.276. (Intervento presentato al convegno 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 tenutosi a usa nel 2015) [10.1109/SISPAD.2015.7292312].
Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p
Visciarelli, Michele;Gnudi, Antonio;Gnani, Elena;
2015
Abstract
In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
