The interaction between strain and border traps in short-channel InGaAs NW MOSFETs is investigated through full-quantum 3D simulations based on a k·p Hamiltonian. Traps induce a sizable degradation of the ON-current, which can be recovered through the application of a suitable strain, provided the quantization effects, which increase by scaling the NW lateral size, do not become too large.
Visciarelli, M., Gnudi, A., Gnani, E., Reggiani, S. (2016). A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. Editions Frontieres [10.1109/ESSDERC.2016.7599616].
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps
VISCIARELLI, MICHELE;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA
2016
Abstract
The interaction between strain and border traps in short-channel InGaAs NW MOSFETs is investigated through full-quantum 3D simulations based on a k·p Hamiltonian. Traps induce a sizable degradation of the ON-current, which can be recovered through the application of a suitable strain, provided the quantization effects, which increase by scaling the NW lateral size, do not become too large.File in questo prodotto:
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