A simulation study exploring the possibility of performance improvements related with the application of stress to nanowire TFETs is carried out. It is demonstrated that appropriate strain conditions, i.e., biaxial tensile strain, induce a remarkable enhancement of the on-state current thanks to bandgap reduction. However, a careful optimization of the device cross-section and strain level must be carried out in order to preserve the device subthreshold swing.

Optimization of GaSb/InAs TFET exploiting different strain configurations

VISCIARELLI, MICHELE;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2016

Abstract

A simulation study exploring the possibility of performance improvements related with the application of stress to nanowire TFETs is carried out. It is demonstrated that appropriate strain conditions, i.e., biaxial tensile strain, induce a remarkable enhancement of the on-state current thanks to bandgap reduction. However, a careful optimization of the device cross-section and strain level must be carried out in order to preserve the device subthreshold swing.
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
16
19
Visciarelli, M.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/588895
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