A simulation study exploring the possibility of performance improvements related with the application of stress to nanowire TFETs is carried out. It is demonstrated that appropriate strain conditions, i.e., biaxial tensile strain, induce a remarkable enhancement of the on-state current thanks to bandgap reduction. However, a careful optimization of the device cross-section and strain level must be carried out in order to preserve the device subthreshold swing.
Visciarelli, M., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G. (2016). Optimization of GaSb/InAs TFET exploiting different strain configurations. Institute of Electrical and Electronics Engineers Inc. [10.1109/ULIS.2016.7440041].
Optimization of GaSb/InAs TFET exploiting different strain configurations
VISCIARELLI, MICHELE;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2016
Abstract
A simulation study exploring the possibility of performance improvements related with the application of stress to nanowire TFETs is carried out. It is demonstrated that appropriate strain conditions, i.e., biaxial tensile strain, induce a remarkable enhancement of the on-state current thanks to bandgap reduction. However, a careful optimization of the device cross-section and strain level must be carried out in order to preserve the device subthreshold swing.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
