A simulation study exploring the possibility of performance improvements for GaSb/InAs nanowire TFETs under appropriate stress conditions is carried out. It is demonstrated that biaxial tensile strain induces a remarkable enhancement of the on-state current thanks to bandgap reduction; however, a degradation of the ambipolar behavior is observed as well. Some stress intensity values and device geometry configurations are investigated. The best simulated device can achieve an on/off current ratio of about 3×107 with ION≈0.33 mA/μm at VDD=0.3 V.
Design guidelines for GaSb/InAs TFET exploiting strain and device size / Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - ELETTRONICO. - 129:(2017), pp. 157-162. [10.1016/j.sse.2016.11.011]
Design guidelines for GaSb/InAs TFET exploiting strain and device size
VISCIARELLI, MICHELE;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2017
Abstract
A simulation study exploring the possibility of performance improvements for GaSb/InAs nanowire TFETs under appropriate stress conditions is carried out. It is demonstrated that biaxial tensile strain induces a remarkable enhancement of the on-state current thanks to bandgap reduction; however, a degradation of the ambipolar behavior is observed as well. Some stress intensity values and device geometry configurations are investigated. The best simulated device can achieve an on/off current ratio of about 3×107 with ION≈0.33 mA/μm at VDD=0.3 V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
