A simulation study exploring the possibility of performance improvements for GaSb/InAs nanowire TFETs under appropriate stress conditions is carried out. It is demonstrated that biaxial tensile strain induces a remarkable enhancement of the on-state current thanks to bandgap reduction; however, a degradation of the ambipolar behavior is observed as well. Some stress intensity values and device geometry configurations are investigated. The best simulated device can achieve an on/off current ratio of about 3×107 with ION≈0.33 mA/μm at VDD=0.3 V.
Visciarelli, M., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G. (2017). Design guidelines for GaSb/InAs TFET exploiting strain and device size. SOLID-STATE ELECTRONICS, 129, 157-162 [10.1016/j.sse.2016.11.011].
Design guidelines for GaSb/InAs TFET exploiting strain and device size
VISCIARELLI, MICHELE;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2017
Abstract
A simulation study exploring the possibility of performance improvements for GaSb/InAs nanowire TFETs under appropriate stress conditions is carried out. It is demonstrated that biaxial tensile strain induces a remarkable enhancement of the on-state current thanks to bandgap reduction; however, a degradation of the ambipolar behavior is observed as well. Some stress intensity values and device geometry configurations are investigated. The best simulated device can achieve an on/off current ratio of about 3×107 with ION≈0.33 mA/μm at VDD=0.3 V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
