The impact of strain and semiconductor/oxide interface traps (ITs) on the turn-on characteristics of a 10x10 nm^2 nanowire (NW) Al0.05Ga0.95Sb/InAs heterojunction n-type tunnel field-effect transistor (TFETs) is carefully investigated using a full-quantum simulator. In order to capture the effect of traps on the device electrostatics in a way consistent with the ballistic approach, the SRH theory has been properly generalized. Our results indicate that the presence of a relatively high IT density can cause a huge current reduction that cannot be recovered exploiting strain. In fact, biaxial tensile strain induces a remarkable current enhancement due to bandgap reduction and tunnel energy alignment at the heterojunction; however, a huge degradation of the ambipolar behavior is also observed.
Gnani, E., Visciarelli, M., Gnudi, A., Reggiani, S., Baccarani, G. (2016). Impact of strain and interface traps on the performance of III-V nanowire TFETs. Institute of Electrical and Electronics Engineers Inc. [10.1109/ICSICT.2016.7998897].
Impact of strain and interface traps on the performance of III-V nanowire TFETs
Gnani, E.
;Visciarelli, M.;Gnudi, A.;Reggiani, S.;Baccarani, G.
2016
Abstract
The impact of strain and semiconductor/oxide interface traps (ITs) on the turn-on characteristics of a 10x10 nm^2 nanowire (NW) Al0.05Ga0.95Sb/InAs heterojunction n-type tunnel field-effect transistor (TFETs) is carefully investigated using a full-quantum simulator. In order to capture the effect of traps on the device electrostatics in a way consistent with the ballistic approach, the SRH theory has been properly generalized. Our results indicate that the presence of a relatively high IT density can cause a huge current reduction that cannot be recovered exploiting strain. In fact, biaxial tensile strain induces a remarkable current enhancement due to bandgap reduction and tunnel energy alignment at the heterojunction; however, a huge degradation of the ambipolar behavior is also observed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
