A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique

Reggiani, Susanna; Gnani, Elena; Rudan, Massimo; Baccarani, Giorgio; Bychikhin, S.; Kuzmik, J.; Pogany, D.; Gornik, E.; Denison, M.; Jensen, N.; Groos, G.; Stecher, M.

doi:10.1109/LED.2005.859685

Two different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and space distribution of temperature is obtained up to 1100 K.

Titolo:	A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique
Autore/i:	REGGIANI, SUSANNA; GNANI, ELENA; RUDAN, MASSIMO; BACCARANI, GIORGIO; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher
Autore/i Unibo:	REGGIANI, SUSANNA GNANI, ELENA RUDAN, MASSIMO BACCARANI, GIORGIO S. Bychikhin J. Kuzmik D. Pogany E. Gornik M. Denison N. Jensen G. Groos M. Stecher mostra contributor esterni nascondi contributor esterni
Anno:	2005
Rivista:	IEEE ELECTRON DEVICE LETTERS
Digital Object Identifier (DOI):	http://dx.doi.org/10.1109/LED.2005.859685
Abstract:	Two different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and space distribution of temperature is obtained up to 1100 K.
Data prodotto definitivo in UGOV:	2006-02-15 16:49:57
Appare nelle tipologie:	1.01 Articolo in rivista

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