Two different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and space distribution of temperature is obtained up to 1100 K.
S. Reggiani, E. Gnani, M. Rudan, G. Baccarani, S. Bychikhin, J. Kuzmik, et al. (2005). A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique. IEEE ELECTRON DEVICE LETTERS, 26, 916-918 [10.1109/LED.2005.859685].
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique
REGGIANI, SUSANNA;GNANI, ELENA;RUDAN, MASSIMO;BACCARANI, GIORGIO;
2005
Abstract
Two different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and space distribution of temperature is obtained up to 1100 K.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
