RUDAN, MASSIMO

RUDAN, MASSIMO  

DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

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Risultati 1 - 20 di 144 (tempo di esecuzione: 0.051 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
15th International Conference on Simulation of Semiconductor Processes and Devices G. Baccarani; M. Rudan 2010-01-01 - IEEE 3.01 Monografia / trattato scientifico in forma di libro -
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure A. Marchi; A. Bertoni; S. Reggiani; M. Rudan 2004-01-01 SEMICONDUCTOR SCIENCE AND TECHNOLOGY - 1.01 Articolo in rivista -
A 5th-order method for 1D-device solution Fabrizio Buscemi; Massimo Rudan; Enrico Piccinini; Rossella Brunetti 2014-01-01 - IEEE 4.01 Contributo in Atti di convegno -
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI 2005-01-01 IEEE TRANSACTIONS ON NANOTECHNOLOGY - 1.01 Articolo in rivista -
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport M. RUDAN; E. GNANI; S. REGGIANI; BACCARANI G. 2005-01-01 IEEE TRANSACTIONS ON NANOTECHNOLOGY - 1.01 Articolo in rivista -
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani 2007-01-01 - s.n 4.01 Contributo in Atti di convegno -
A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors M. Rudan; G. Perroni 2004-01-01 - Springer 4.01 Contributo in Atti di convegno -
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process Buscemi F.; Piccinini E.; Brunetti R.; Rudan M.; Jacoboni C. 2009-01-01 - s.n 4.01 Contributo in Atti di convegno -
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs E. Gnani; S. Reggiani; M. Rudan; G. Baccarani 2004-01-01 - s.n 4.01 Contributo in Atti di convegno -
A New Hopping Model for Transport in Chalcogenide Glasses Rudan M.; Giovanardi F.; Piccinini E.; Buscemi F.; Brunetti R.; Jacoboni C. 2009-01-01 - IEEE 4.01 Contributo in Atti di convegno -
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. ...Denison; N. Jensen; G. Groos; M. Stecher 2005-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista -
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani 2007-01-01 - s.n 4.01 Contributo in Atti di convegno -
A quantum mechanical analysis of the electrostatics in multiple-gate FETs E. Gnani; S. Reggiani; M. Rudan; G. Baccarani 2005-01-01 - IEEE EDS Japan Chapter 4.01 Contributo in Atti di convegno -
A Schroedinger-Poisson Solution of CNT-FET Arrays A. Marchi; S. Reggiani; M. Rudan 2005-01-01 - IEEE EDS Japan Chapter 4.01 Contributo in Atti di convegno -
A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches AFFINITO F.; BIGIANI A.; BRUNETTI R.; CARLONI P.; JACOBONI C.; PICCININI E.; RUDAN M. 2004-01-01 - IEEE 4.01 Contributo in Atti di convegno -
A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches F. AFFINITO; A. BIGIANI; R. BRUNETTI; P. CARLONI; C. JACOBONI; E. PICCININI; M. RUDAN 2005-01-01 JOURNAL OF COMPUTATIONAL ELECTRONICS - 1.01 Articolo in rivista -
Adaptive K-NN for the detection of air pollutants with a sensor array RONCAGLIA A.; ELMI I.; DORI L.; RUDAN M. 2004-01-01 IEEE SENSORS JOURNAL - 1.01 Articolo in rivista -
Analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G. 2000-01-01 VLSI DESIGN - 1.01 Articolo in rivista -
Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information E. Gnani; F. Ghidoni; M. Rudan 2004-01-01 - Springer 4.01 Contributo in Atti di convegno -
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 E. Piccinini; F. Buscemi; T. Tsafack; R. Brunetti; M. Rudan; C. Jacoboni 2008-01-01 - s.n 4.01 Contributo in Atti di convegno -