The transport scaling limits of Ovonic devices are studied by means of a numerical solution of a time- and space-dependent transport model based on a set of equations that provide a good physical grasp of the microscopic process in hand. The predictivity of the approach has been confirmed through the comparison with recent experimental results where the parasitic effects have been reduced by the use of top-technology measuring equipments. The present analysis is performed for the AgInSbTe chalcogenide, since this material exhibits a steep threshold-switching dynamics which makes it promising for high-speed, non-volatile memory applications.
Transport Scaling Limits of Ovonic Devices: A Simulative Approach / Jacoboni, C.; Piccinini, E.; Brunetti, R.; Rudan, M.. - In: JOURNAL OF PHYSICS. CONFERENCE SERIES. - ISSN 1742-6588. - STAMPA. - 906:1(2017), pp. 012005.1-012005.4. [10.1088/1742-6596/906/1/012005]
Transport Scaling Limits of Ovonic Devices: A Simulative Approach
Piccinini, E.;Rudan, M.
2017
Abstract
The transport scaling limits of Ovonic devices are studied by means of a numerical solution of a time- and space-dependent transport model based on a set of equations that provide a good physical grasp of the microscopic process in hand. The predictivity of the approach has been confirmed through the comparison with recent experimental results where the parasitic effects have been reduced by the use of top-technology measuring equipments. The present analysis is performed for the AgInSbTe chalcogenide, since this material exhibits a steep threshold-switching dynamics which makes it promising for high-speed, non-volatile memory applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
