A general expression is worked out for the trap-to-trap transition probability per unit time, applicable to amorphous materials where charge conduction is dominated by localized states. The outcome is a closed-form expression involving temperature and local electric potential. It is suitable for inclusion into hydrodynamic or energy-balance numerical solvers to be used for simulating devices based on amorphous materials.

Piccinini, E., Rudan, M., Brunetti, R. (2016). Closed-form transition rate in hopping conduction. New York : IEEE [10.1109/ESSDERC.2016.7599649].

Closed-form transition rate in hopping conduction

PICCININI, ENRICO;RUDAN, MASSIMO;
2016

Abstract

A general expression is worked out for the trap-to-trap transition probability per unit time, applicable to amorphous materials where charge conduction is dominated by localized states. The outcome is a closed-form expression involving temperature and local electric potential. It is suitable for inclusion into hydrodynamic or energy-balance numerical solvers to be used for simulating devices based on amorphous materials.
2016
2016 46th European Solid-State Device Research Conference (ESSDERC)
315
318
Piccinini, E., Rudan, M., Brunetti, R. (2016). Closed-form transition rate in hopping conduction. New York : IEEE [10.1109/ESSDERC.2016.7599649].
Piccinini, E.; Rudan, M.; Brunetti, R.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/588752
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