Some classes of differential equations are amenable to a numerical solution based on the Numerov process (NP), whose accuracy can be up to two orders of magnitude superior with respect to the standard finite-difference or box-integration methods, with a negligible increase in the computational cost. The paper shows that the equations describing charge transport in solid-state devices can suitably be manipulated to make the application of NP possible. Also, thanks to a specifically-tailored algebraic solver, the 1D Poisson equation is fully decoupled from the transport equation, this reducing the procedure to the solution of a single non-linear equation. The example of an Ovonic device is considered, used as selector in phase-change memory applications.

Extending the numerov process to the semiconductor transport equations / Speciale N.; Brunettil R.; Rudan M.. - ELETTRONICO. - 2019-:(2019), pp. 8870513.1-8870513.4. (Intervento presentato al convegno 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 tenutosi a Palazzo di Toppo Wassermann, ita nel 2019) [10.1109/SISPAD.2019.8870513].

Extending the numerov process to the semiconductor transport equations

Speciale N.
Primo
;
Rudan M.
Ultimo
2019

Abstract

Some classes of differential equations are amenable to a numerical solution based on the Numerov process (NP), whose accuracy can be up to two orders of magnitude superior with respect to the standard finite-difference or box-integration methods, with a negligible increase in the computational cost. The paper shows that the equations describing charge transport in solid-state devices can suitably be manipulated to make the application of NP possible. Also, thanks to a specifically-tailored algebraic solver, the 1D Poisson equation is fully decoupled from the transport equation, this reducing the procedure to the solution of a single non-linear equation. The example of an Ovonic device is considered, used as selector in phase-change memory applications.
2019
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
1
4
Extending the numerov process to the semiconductor transport equations / Speciale N.; Brunettil R.; Rudan M.. - ELETTRONICO. - 2019-:(2019), pp. 8870513.1-8870513.4. (Intervento presentato al convegno 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 tenutosi a Palazzo di Toppo Wassermann, ita nel 2019) [10.1109/SISPAD.2019.8870513].
Speciale N.; Brunettil R.; Rudan M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/880515
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