This paper presents a computational analysis, by means of a compact model, of the electric response of an Ovonic Threshold-Switch device embedded in a circuit subjected to an oscillatory bias.
Electric response of ovonic materials to oscillating potentials / Piccinini, E.; Brunetti, R.; Rudan, M.; Jacoboni, C.. - STAMPA. - (2016), pp. 323-326. (Intervento presentato al convegno 2016 International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2016 tenutosi a Nuremberg, Germany nel September 6-8, 2016) [10.1109/SISPAD.2016.7605212].
Electric response of ovonic materials to oscillating potentials
PICCININI, ENRICO;RUDAN, MASSIMO;
2016
Abstract
This paper presents a computational analysis, by means of a compact model, of the electric response of an Ovonic Threshold-Switch device embedded in a circuit subjected to an oscillatory bias.File in questo prodotto:
Eventuali allegati, non sono esposti
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
