The time evolution of current and voltage in Ovonic switching devices is affected, on one side, by parasitic elements due to contacts and connectors and, on the other one, by the internal-relaxation mechanisms of the material itself. The two aspects, respectively termed here “intrinsic” and “extrinsic” dynamics, are investigated in this paper on the basis of the time-dependent, trap-limited conduction model proposed by the authors for investigating this type of devices.
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices / Buscemi, F.; Piccinini, E.; Brunetti, R.; Rudan, M.. - STAMPA. - (2015), pp. 429-432. (Intervento presentato al convegno 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) tenutosi a Washington DC, USA nel Sept. 9-11, 2015) [10.1109/SISPAD.2015.7292352].
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices
PICCININI, ENRICO;RUDAN, MASSIMO
2015
Abstract
The time evolution of current and voltage in Ovonic switching devices is affected, on one side, by parasitic elements due to contacts and connectors and, on the other one, by the internal-relaxation mechanisms of the material itself. The two aspects, respectively termed here “intrinsic” and “extrinsic” dynamics, are investigated in this paper on the basis of the time-dependent, trap-limited conduction model proposed by the authors for investigating this type of devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
