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EnglishA theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in a temperature range up to about 1000 K. The proposed impact-ionization model amply extends the range of simulation tools up to temperatures which are important to predict the failure threshold of ESD-protection and power devices. Different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K. ©2007 American Institute of Physics
| Titolo: | Experimental Investigation on Carrier Dynamics at the Thermal Breakdown | |
| Autore/i: | REGGIANI, SUSANNA; GNANI, ELENA; RUDAN, MASSIMO; BACCARANI, GIORGIO; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher | |
| Autore/i Unibo: | ||
| Anno: | 2007 | |
| Titolo del libro: | AIP Conference Proceedings | |
| Pagina iniziale: | 1497 | |
| Pagina finale: | 1498 | |
| Abstract: | A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in a temperature range up to about 1000 K. The proposed impact-ionization model amply extends the range of simulation tools up to temperatures which are important to predict the failure threshold of ESD-protection and power devices. Different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K. ©2007 American Institute of Physics | |
| Data prodotto definitivo in UGOV: | 6-dic-2007 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
File in questo prodotto:
http://hdl.handle.net/11585/51239
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