In this paper we review the evolution of Microelectronics and its transformation into Nanoelectronics, following the predictions of Moore's law, and some of the issues related with this evolution. Next, we discuss the requirements of device modeling and the solutions proposed throughout the years to address the physical effects related with an extreme device miniaturization, such as hot-electron effects, band splitting into multiple sub-bands, quasi-ballistic transport and electron tunneling. The most important physical models are shortly highlighted, and a few simulation results of heterojunction TFETs are reported and discussed.
Baccarani, G., Gnani, E., Gnudi, A., Reggiani, S. (2016). Theoretical analysis and modeling for nanoelectronics. SOLID-STATE ELECTRONICS, 125, 2-13 [10.1016/j.sse.2016.07.020].
Theoretical analysis and modeling for nanoelectronics
BACCARANI, GIORGIO;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA
2016
Abstract
In this paper we review the evolution of Microelectronics and its transformation into Nanoelectronics, following the predictions of Moore's law, and some of the issues related with this evolution. Next, we discuss the requirements of device modeling and the solutions proposed throughout the years to address the physical effects related with an extreme device miniaturization, such as hot-electron effects, band splitting into multiple sub-bands, quasi-ballistic transport and electron tunneling. The most important physical models are shortly highlighted, and a few simulation results of heterojunction TFETs are reported and discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
