Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STIbased LDMOS. Then, the detrimental effect of extended Si/SiO2 interfaces along the silicon fingers in the MF-LDMOS has been widely investigated. Experimental results are analyzed and discussed on the basis of numerical simulations. The application of a time-dependent HCS degradation model is successfully proved for the first time on the conventional and MF-LDMOS devices at different stress biases and ambient temperatures.

Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight

POLI, STEFANO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;GNANI, ELENA;GNUDI, ANTONIO;
2010

Abstract

Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STIbased LDMOS. Then, the detrimental effect of extended Si/SiO2 interfaces along the silicon fingers in the MF-LDMOS has been widely investigated. Experimental results are analyzed and discussed on the basis of numerical simulations. The application of a time-dependent HCS degradation model is successfully proved for the first time on the conventional and MF-LDMOS devices at different stress biases and ambient temperatures.
Conference Proceedings of the ESSDERC 2010
269
272
S. Poli; A. Loi; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/96180
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