Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STIbased LDMOS. Then, the detrimental effect of extended Si/SiO2 interfaces along the silicon fingers in the MF-LDMOS has been widely investigated. Experimental results are analyzed and discussed on the basis of numerical simulations. The application of a time-dependent HCS degradation model is successfully proved for the first time on the conventional and MF-LDMOS devices at different stress biases and ambient temperatures.
S. Poli, A. Loi, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, et al. (2010). Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight. SEVILLE : F. Gamiz and A. Godoy [10.1109/ESSDERC.2010.5618364].
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight
POLI, STEFANO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;GNANI, ELENA;GNUDI, ANTONIO;
2010
Abstract
Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STIbased LDMOS. Then, the detrimental effect of extended Si/SiO2 interfaces along the silicon fingers in the MF-LDMOS has been widely investigated. Experimental results are analyzed and discussed on the basis of numerical simulations. The application of a time-dependent HCS degradation model is successfully proved for the first time on the conventional and MF-LDMOS devices at different stress biases and ambient temperatures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
