POLI, STEFANO

POLI, STEFANO  

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Risultati 1 - 18 di 18 (tempo di esecuzione: 0.032 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Analysis of HCS in STI-based LDMOS transistors S. Reggiani; S. Poli; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Se...etharaman 2010-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Computational study of the ultimate scaling limits of CNT tunneling devices S. Poli; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani 2008-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Full Understanding of Hot-Carrier-Induced Degradation in STI-based LDMOS transistors in the Impact-Ionization Operating Regime S. Poli; S. Reggiani; M. Denison; G. Baccarani; E. Gnani; A. Gnudi; S. Pendharkar; R. Wise 2011-01-01 - IEEE Publishing Services 4.01 Contributo in Atti di convegno -
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise 2011-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight S. Poli; A. Loi; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wis...e; S. Seetharaman. 2010-01-01 - F. Gamiz and A. Godoy 4.01 Contributo in Atti di convegno -
Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor S. Poli; S. Reggiani; M. Denison; G. Baccarani; E. Gnani; A. Gnudi; S. Pendharkar; R. Wise; S. Se...etharaman 2010-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Numerical investigation of the total SOA of trench field-plate LDMOS devices S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise 2010-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Optimization and Analysis of the Dual n/p-LDMOS Device S. Poli; S. Reggiani; R.K. Sharma; M. Denison; E. Gnani; A. Gnudi; G. Baccarani 2012-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials R. Grassi; S. Poli; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani 2007-01-01 - s.n 4.01 Contributo in Atti di convegno -
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials R. Grassi; S. Poli; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani 2008-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors S. Reggiani; S. Poli; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise 2011-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Post-processing of data generated by a chaotic pipelined ADC for the robust generation of perfectly random bitstreams POLI S.; CALLEGARI S.; ROVATTI R.; SETTI G. 2004-01-01 - IEEE Press 4.01 Contributo in Atti di convegno -
Size Dependence of Surface-Roughness Limited Mobility in Silicon Nanowire FETs S. Poli; M.G. Pala; T. Poiroux; S. Deleonibus; G. Baccarani 2008-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
TCAD optimization of a dual N/P-LDMOS transistor S. Poli; S. Reggiani; R. K. Sharma; G. Baccarani; E. Gnani; A. Gnudi; M. Denison 2011-01-01 - IEEE Publishing Services 4.01 Contributo in Atti di convegno -
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors S. Poli; S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise 2011-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista -
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani 2009-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani 2008-01-01 - s.n 4.01 Contributo in Atti di convegno -
Tight-binding versus effective-mass modeling of carbon nanotube FETs S. Poli; G. Fiori; S. Reggiani; A. Gnudi; G. Iannaccone 2007-01-01 - s.n 4.01 Contributo in Atti di convegno -