We show that a ballistic quantum transport model based on the effective-mass approximation can fairly well describe the I-V characteristics of armchair carbon nanoribbon FETs in all bias conditions, including the regimes dominated by direct or band-to-band tunneling, provided first-order nonparabolic corrections are included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with a full atomistic tight-binding model.

R. Grassi, S. Poli, E Gnani, A. Gnudi, S. Reggiani, G. Baccarani (2008). Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs. UDINE : s.n.

Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs

GRASSI, ROBERTO;POLI, STEFANO;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2008

Abstract

We show that a ballistic quantum transport model based on the effective-mass approximation can fairly well describe the I-V characteristics of armchair carbon nanoribbon FETs in all bias conditions, including the regimes dominated by direct or band-to-band tunneling, provided first-order nonparabolic corrections are included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with a full atomistic tight-binding model.
2008
Proceedings of the 9th International Conference on Ultimate Integration on Silicon
121
124
R. Grassi, S. Poli, E Gnani, A. Gnudi, S. Reggiani, G. Baccarani (2008). Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs. UDINE : s.n.
R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/66563
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