The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the off current limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2 as gate dielectrics.
R. Grassi, S. Poli, S. Reggiani, A. Gnudi, M. Rudan, G. Baccarani (2007). Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. s.l : s.n.
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials
GRASSI, ROBERTO;POLI, STEFANO;REGGIANI, SUSANNA;GNUDI, ANTONIO;RUDAN, MASSIMO;BACCARANI, GIORGIO
2007
Abstract
The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the off current limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2 as gate dielectrics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
