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EnglishThe impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the off current limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2 as gate dielectrics.
| Titolo: | Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials | |
| Autore/i: | GRASSI, ROBERTO; POLI, STEFANO; REGGIANI, SUSANNA; GNUDI, ANTONIO; RUDAN, MASSIMO; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2007 | |
| Titolo del libro: | Proceedings of the 37th European Solid-State Device Research Conference (ESSDERC 2007) | |
| Pagina iniziale: | 247 | |
| Pagina finale: | 250 | |
| Abstract: | The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the off current limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2 as gate dielectrics. | |
| Data prodotto definitivo in UGOV: | 6-dic-2007 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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