The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the off current limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2 as gate dielectrics.

Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

GRASSI, ROBERTO;POLI, STEFANO;REGGIANI, SUSANNA;GNUDI, ANTONIO;RUDAN, MASSIMO;BACCARANI, GIORGIO
2007

Abstract

The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the off current limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2 as gate dielectrics.
Proceedings of the 37th European Solid-State Device Research Conference (ESSDERC 2007)
247
250
R. Grassi; S. Poli; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/51252
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