POLI, STEFANO
POLI, STEFANO
Optimization and Analysis of the Dual n/p-LDMOS Device
2012 S. Poli; S. Reggiani; R.K. Sharma; M. Denison; E. Gnani; A. Gnudi; G. Baccarani
Full Understanding of Hot-Carrier-Induced Degradation in STI-based LDMOS transistors in the Impact-Ionization Operating Regime
2011 S. Poli; S. Reggiani; M. Denison; G. Baccarani; E. Gnani; A. Gnudi; S. Pendharkar; R. Wise
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight
2011 S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise
Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors
2011 S. Reggiani; S. Poli; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise
TCAD optimization of a dual N/P-LDMOS transistor
2011 S. Poli; S. Reggiani; R. K. Sharma; G. Baccarani; E. Gnani; A. Gnudi; M. Denison
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors
2011 S. Poli; S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise
Analysis of HCS in STI-based LDMOS transistors
2010 S. Reggiani; S. Poli; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight
2010 S. Poli; A. Loi; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman.
Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor
2010 S. Poli; S. Reggiani; M. Denison; G. Baccarani; E. Gnani; A. Gnudi; S. Pendharkar; R. Wise; S. Seetharaman
Numerical investigation of the total SOA of trench field-plate LDMOS devices
2010 S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs
2009 R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani
Computational study of the ultimate scaling limits of CNT tunneling devices
2008 S. Poli; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials
2008 R. Grassi; S. Poli; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani
Size Dependence of Surface-Roughness Limited Mobility in Silicon Nanowire FETs
2008 S. Poli; M.G. Pala; T. Poiroux; S. Deleonibus; G. Baccarani
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs
2008 R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials
2007 R. Grassi; S. Poli; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani
Tight-binding versus effective-mass modeling of carbon nanotube FETs
2007 S. Poli; G. Fiori; S. Reggiani; A. Gnudi; G. Iannaccone
Post-processing of data generated by a chaotic pipelined ADC for the robust generation of perfectly random bitstreams
2004 POLI S.; CALLEGARI S.; ROVATTI R.; SETTI G.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Optimization and Analysis of the Dual n/p-LDMOS Device | S. Poli; S. Reggiani; R.K. Sharma; M. Denison; E. Gnani; A. Gnudi; G. Baccarani | 2012-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Full Understanding of Hot-Carrier-Induced Degradation in STI-based LDMOS transistors in the Impact-Ionization Operating Regime | S. Poli; S. Reggiani; M. Denison; G. Baccarani; E. Gnani; A. Gnudi; S. Pendharkar; R. Wise | 2011-01-01 | - | IEEE Publishing Services | 4.01 Contributo in Atti di convegno | - |
| Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight | S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise | 2011-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors | S. Reggiani; S. Poli; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise | 2011-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| TCAD optimization of a dual N/P-LDMOS transistor | S. Poli; S. Reggiani; R. K. Sharma; G. Baccarani; E. Gnani; A. Gnudi; M. Denison | 2011-01-01 | - | IEEE Publishing Services | 4.01 Contributo in Atti di convegno | - |
| Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors | S. Poli; S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise | 2011-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
| Analysis of HCS in STI-based LDMOS transistors | S. Reggiani; S. Poli; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Se...etharaman | 2010-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight | S. Poli; A. Loi; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wis...e; S. Seetharaman. | 2010-01-01 | - | F. Gamiz and A. Godoy | 4.01 Contributo in Atti di convegno | - |
| Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor | S. Poli; S. Reggiani; M. Denison; G. Baccarani; E. Gnani; A. Gnudi; S. Pendharkar; R. Wise; S. Se...etharaman | 2010-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Numerical investigation of the total SOA of trench field-plate LDMOS devices | S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise | 2010-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs | R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani | 2009-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Computational study of the ultimate scaling limits of CNT tunneling devices | S. Poli; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani | 2008-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials | R. Grassi; S. Poli; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2008-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Size Dependence of Surface-Roughness Limited Mobility in Silicon Nanowire FETs | S. Poli; M.G. Pala; T. Poiroux; S. Deleonibus; G. Baccarani | 2008-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs | R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani | 2008-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials | R. Grassi; S. Poli; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani | 2007-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Tight-binding versus effective-mass modeling of carbon nanotube FETs | S. Poli; G. Fiori; S. Reggiani; A. Gnudi; G. Iannaccone | 2007-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Post-processing of data generated by a chaotic pipelined ADC for the robust generation of perfectly random bitstreams | POLI S.; CALLEGARI S.; ROVATTI R.; SETTI G. | 2004-01-01 | - | IEEE Press | 4.01 Contributo in Atti di convegno | - |