A scalable Dual n/p-LDMOS device with interesting Rsp versus Vbd performance for voltage applications in the range of 20–120 V is identified through proper optimization. Three designs have been proposed, based on different process implementations. The physical behavior of the device is reviewed and analyzed. The current expansion induced by the bipolar conductance in the drift region at high gate and drain biases is fully explained. The thermal behavior in a worst case condition is investigated, and the reduction in performance in terms of current and safe-operating area are reported. The switching performance is addressed, showing very good transient times in any analyzed load condition.

S. Poli, S. Reggiani, R.K. Sharma, M. Denison, E. Gnani, A. Gnudi, et al. (2012). Optimization and Analysis of the Dual n/p-LDMOS Device. IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 745-753 [10.1109/TED.2011.2178189].

Optimization and Analysis of the Dual n/p-LDMOS Device

POLI, STEFANO;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2012

Abstract

A scalable Dual n/p-LDMOS device with interesting Rsp versus Vbd performance for voltage applications in the range of 20–120 V is identified through proper optimization. Three designs have been proposed, based on different process implementations. The physical behavior of the device is reviewed and analyzed. The current expansion induced by the bipolar conductance in the drift region at high gate and drain biases is fully explained. The thermal behavior in a worst case condition is investigated, and the reduction in performance in terms of current and safe-operating area are reported. The switching performance is addressed, showing very good transient times in any analyzed load condition.
2012
S. Poli, S. Reggiani, R.K. Sharma, M. Denison, E. Gnani, A. Gnudi, et al. (2012). Optimization and Analysis of the Dual n/p-LDMOS Device. IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 745-753 [10.1109/TED.2011.2178189].
S. Poli; S. Reggiani; R.K. Sharma; M. Denison; E. Gnani; A. Gnudi; G. Baccarani
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/121257
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 12
  • ???jsp.display-item.citation.isi??? 9
social impact