A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA.
Numerical investigation of the total SOA of trench field-plate LDMOS devices / S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise. - STAMPA. - (2010), pp. 111-114. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) tenutosi a Bologna, Italy nel 6-8 September 2010) [10.1109/SISPAD.2010.5604555].
Numerical investigation of the total SOA of trench field-plate LDMOS devices
POLI, STEFANO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;GNANI, ELENA;GNUDI, ANTONIO;
2010
Abstract
A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
