A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA.

Numerical investigation of the total SOA of trench field-plate LDMOS devices

POLI, STEFANO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;GNANI, ELENA;GNUDI, ANTONIO;
2010

Abstract

A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA.
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010)
111
114
S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/93250
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