A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA.

S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, et al. (2010). Numerical investigation of the total SOA of trench field-plate LDMOS devices. BOLOGNA : IEEE [10.1109/SISPAD.2010.5604555].

Numerical investigation of the total SOA of trench field-plate LDMOS devices

POLI, STEFANO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;GNANI, ELENA;GNUDI, ANTONIO;
2010

Abstract

A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA.
2010
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010)
111
114
S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, et al. (2010). Numerical investigation of the total SOA of trench field-plate LDMOS devices. BOLOGNA : IEEE [10.1109/SISPAD.2010.5604555].
S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/93250
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