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EnglishA numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA.
| Titolo: | Numerical investigation of the total SOA of trench field-plate LDMOS devices |
| Autore/i: | POLI, STEFANO; REGGIANI, SUSANNA; BACCARANI, GIORGIO; GNANI, ELENA; GNUDI, ANTONIO; M. Denison; S. Pendharkar; R. Wise |
| Autore/i Unibo: | |
| Anno: | 2010 |
| Titolo del libro: | Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) |
| Pagina iniziale: | 111 |
| Pagina finale: | 114 |
| Digital Object Identifier (DOI): | 10.1109/SISPAD.2010.5604555 |
| Abstract: | A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA. |
| Data prodotto definitivo in UGOV: | 1-dic-2010 |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
File in questo prodotto:
http://hdl.handle.net/11585/93250
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