A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA.
S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, et al. (2010). Numerical investigation of the total SOA of trench field-plate LDMOS devices. BOLOGNA : IEEE [10.1109/SISPAD.2010.5604555].
Numerical investigation of the total SOA of trench field-plate LDMOS devices
POLI, STEFANO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;GNANI, ELENA;GNUDI, ANTONIO;
2010
Abstract
A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific onresistance (RSP) vs. breakdown voltage (VBD) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safeoperating area (SOA), hot-carrier stress (HCS) reliability, selfheating effects (SHE) and thermal SOA.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
