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EnglishA physics-based analytical model for the on-resistance in the linear transport regime and its application as an alternative tool for the investigation of the hot-carrier stress degradation in shallow-trench-isolation-based laterally diffused MOS devices are presented. The extraction of the model and its validation by comparison with experimental and TCAD data are reported. A thorough investigation of the degradation under low- and high-gate stress biases, corresponding to saturation and impact-ionization regimes, is carried out to gain an insight on the overall bias and temperature dependences of the parameter drifts.
| Titolo: | Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors | |
| Autore/i: | REGGIANI, SUSANNA; POLI, STEFANO; M. Denison; GNANI, ELENA; GNUDI, ANTONIO; BACCARANI, GIORGIO; S. Pendharkar; R. Wise | |
| Autore/i Unibo: | ||
| Anno: | 2011 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TED.2011.2160023 | |
| Abstract: | A physics-based analytical model for the on-resistance in the linear transport regime and its application as an alternative tool for the investigation of the hot-carrier stress degradation in shallow-trench-isolation-based laterally diffused MOS devices are presented. The extraction of the model and its validation by comparison with experimental and TCAD data are reported. A thorough investigation of the degradation under low- and high-gate stress biases, corresponding to saturation and impact-ionization regimes, is carried out to gain an insight on the overall bias and temperature dependences of the parameter drifts. | |
| Data prodotto definitivo in UGOV: | 2013-06-26 18:15:02 | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11585/106876
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