In this work we model the electrical properties of the junctionless nanowire field-effect transistor, which has recently been proposed as a possible alternative to the junction-based FET. The analytical model worked out here assumes a cylindrical geometry and is meant to provide a physical understanding of the device behavior. Most notably, it aims to clarify the motivation for its nearly-ideal subthreshold slope and its excellent on-state current, while being a depletion device with a lower electron mobility due to impurity scattering. At the same time, the model clarifies a constraint binding the allowable value of the doping density per unit length and its impact on the overall device performance. The device variability and the parasitic S/D resistances are identified as the most important limitations of the junctionless NW-FET.

Theory of the Junctionless Nanowire FET

GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2011

Abstract

In this work we model the electrical properties of the junctionless nanowire field-effect transistor, which has recently been proposed as a possible alternative to the junction-based FET. The analytical model worked out here assumes a cylindrical geometry and is meant to provide a physical understanding of the device behavior. Most notably, it aims to clarify the motivation for its nearly-ideal subthreshold slope and its excellent on-state current, while being a depletion device with a lower electron mobility due to impurity scattering. At the same time, the model clarifies a constraint binding the allowable value of the doping density per unit length and its impact on the overall device performance. The device variability and the parasitic S/D resistances are identified as the most important limitations of the junctionless NW-FET.
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/106845
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