In this work we investigate and compare the electrostatics of fully-depleted double-gate (DG) and cylindrical nanowire (CNW) MOSFETs accounting for quantum effects and, in doing so, we propose a newapproach for the self-consistent solution of the Schroedinger-Poisson equations based on a rigorous time-independent perturbation method. This study leads to the conclusion that the cylindrical geometry is superior to the equivalent double-gate structure both in terms of the current ratio Ion/Ioff and the available voltage gain gm/go, indicating that both the subthreshold slope and the drain-induced barrier lowering (DIBL) are better controlled by the CNW-MOSFET.

E. Gnani, S. Reggiani, M. Rudan, G. Baccarani (2005). On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs. JOURNAL OF COMPUTATIONAL ELECTRONICS, 4, 71-74 [10.1007/s10825-005-7110-0].

On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs

GNANI, ELENA;REGGIANI, SUSANNA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2005

Abstract

In this work we investigate and compare the electrostatics of fully-depleted double-gate (DG) and cylindrical nanowire (CNW) MOSFETs accounting for quantum effects and, in doing so, we propose a newapproach for the self-consistent solution of the Schroedinger-Poisson equations based on a rigorous time-independent perturbation method. This study leads to the conclusion that the cylindrical geometry is superior to the equivalent double-gate structure both in terms of the current ratio Ion/Ioff and the available voltage gain gm/go, indicating that both the subthreshold slope and the drain-induced barrier lowering (DIBL) are better controlled by the CNW-MOSFET.
2005
E. Gnani, S. Reggiani, M. Rudan, G. Baccarani (2005). On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs. JOURNAL OF COMPUTATIONAL ELECTRONICS, 4, 71-74 [10.1007/s10825-005-7110-0].
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/15357
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 13
  • ???jsp.display-item.citation.isi??? ND
social impact