In this work we investigate and compare the electrostatics of fully-depleted double-gate (DG) and cylindrical nanowire (CNW) MOSFETs accounting for quantum effects and, in doing so, we propose a newapproach for the self-consistent solution of the Schroedinger-Poisson equations based on a rigorous time-independent perturbation method. This study leads to the conclusion that the cylindrical geometry is superior to the equivalent double-gate structure both in terms of the current ratio Ion/Ioff and the available voltage gain gm/go, indicating that both the subthreshold slope and the drain-induced barrier lowering (DIBL) are better controlled by the CNW-MOSFET.
E. Gnani, S. Reggiani, M. Rudan, G. Baccarani (2005). On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs. JOURNAL OF COMPUTATIONAL ELECTRONICS, 4, 71-74 [10.1007/s10825-005-7110-0].
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
GNANI, ELENA;REGGIANI, SUSANNA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2005
Abstract
In this work we investigate and compare the electrostatics of fully-depleted double-gate (DG) and cylindrical nanowire (CNW) MOSFETs accounting for quantum effects and, in doing so, we propose a newapproach for the self-consistent solution of the Schroedinger-Poisson equations based on a rigorous time-independent perturbation method. This study leads to the conclusion that the cylindrical geometry is superior to the equivalent double-gate structure both in terms of the current ratio Ion/Ioff and the available voltage gain gm/go, indicating that both the subthreshold slope and the drain-induced barrier lowering (DIBL) are better controlled by the CNW-MOSFET.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
