Abstract—In this paper, an experimental investigation on high-temperature electron impact-ionization in silicon is carried out with the aim of improving the qualitative and quantitative understanding of carrier transport under electrostatic discharge (ESD) conditions. Special test devices were designed and manufactured using Infineon’s SPT5 technology, namely: a bipolar junction transistor (BJT), a static-induction transistor (SIT) and a vertical DMOS transistor (VDMOS), all of them with a cylindrical geometry. The measurements were carried out using a customized measurement setup that allows very high operating temperatures to be reached. A novel extraction methodology allowing for the determination of the impact-ionization coefficient against electric field and lattice temperature has been used. The experiments, carried out up to 773 K, confirm a previous theoretical investigation on impact-ionization, and widely extend the validity range of the compact model here proposed for implementation in device simulation tools. This is especially useful to predict the failure threshold of ESD-protection and power devices.
S. Reggiani, E. Gnani, M. Rudan, G. Baccarani, C. Corvasce, D. Barlini, et al. (2005). Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures. IEEE TRANSACTIONS ON ELECTRON DEVICES, 52, 2290-2299 [10.1109/TED.2005.856807].
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures
REGGIANI, SUSANNA;GNANI, ELENA;RUDAN, MASSIMO;BACCARANI, GIORGIO;
2005
Abstract
Abstract—In this paper, an experimental investigation on high-temperature electron impact-ionization in silicon is carried out with the aim of improving the qualitative and quantitative understanding of carrier transport under electrostatic discharge (ESD) conditions. Special test devices were designed and manufactured using Infineon’s SPT5 technology, namely: a bipolar junction transistor (BJT), a static-induction transistor (SIT) and a vertical DMOS transistor (VDMOS), all of them with a cylindrical geometry. The measurements were carried out using a customized measurement setup that allows very high operating temperatures to be reached. A novel extraction methodology allowing for the determination of the impact-ionization coefficient against electric field and lattice temperature has been used. The experiments, carried out up to 773 K, confirm a previous theoretical investigation on impact-ionization, and widely extend the validity range of the compact model here proposed for implementation in device simulation tools. This is especially useful to predict the failure threshold of ESD-protection and power devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
