In this paper we extend a previously developed BTE solver to investigate the effect of SR on i) electron mobility in the infinitely long channel of cylindrical nanowire FETs, ii) current characteristics of cylindrical SNW-FETs with decananometer gate lengths.
M. Lenzi, A. Gnudi, S. Reggiani, E. Gnani, M. Rudan, G. Baccarani (2007). Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness. s.l : s.n.
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness
LENZI, MARCO;GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2007
Abstract
In this paper we extend a previously developed BTE solver to investigate the effect of SR on i) electron mobility in the infinitely long channel of cylindrical nanowire FETs, ii) current characteristics of cylindrical SNW-FETs with decananometer gate lengths.File in questo prodotto:
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