In this paper we extend a previously developed BTE solver to investigate the effect of SR on i) electron mobility in the infinitely long channel of cylindrical nanowire FETs, ii) current characteristics of cylindrical SNW-FETs with decananometer gate lengths.
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness / M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani. - STAMPA. - (2007), pp. 1-2. (Intervento presentato al convegno 12th International Workshop on Computational Electronics (IWCE-12) tenutosi a Amherst, USA nel 8-10 October, 2007).
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness
LENZI, MARCO;GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2007
Abstract
In this paper we extend a previously developed BTE solver to investigate the effect of SR on i) electron mobility in the infinitely long channel of cylindrical nanowire FETs, ii) current characteristics of cylindrical SNW-FETs with decananometer gate lengths.File in questo prodotto:
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