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EnglishIn this work we investigate the electrostatics of fully-depleted cylindrical nanowire (CNW) MOSFETs accounting for quantum effects and, in doing so, we propose a new approach for the self-consistent solution of the Schroedinger-Poisson equations based on a rigorous time-independent perturbation approach. The strength of this method is that the Schroedinger equation is solved in a semi-analytical form, thus eliminating discretization errors and providing very accurate energy eigenvalues and eigenfunctions; furthermore, the computation time is cut down by an order of magnitude. A major result of this investigation is that the ON/OFF current ratio increases as the diameter of the CNW-MOSFET is scaled down. This makes them good candidates for an advanced low-leakage CMOS technology. The above technique is finally used to investigate the influence of high-k gate dielectrics on the electrostatics of CNW-MOSFETs, indicating that an improved performance is achieved, though not as large as one would expect from the k ratio.
| Titolo: | A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs | |
| Autore/i: | GNANI, ELENA; REGGIANI, SUSANNA; RUDAN, MASSIMO; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2004 | |
| Titolo del libro: | Proceedings of the 34th European Solid-State Deviec Research Conference | |
| Pagina iniziale: | 177 | |
| Pagina finale: | 180 | |
| Abstract: | In this work we investigate the electrostatics of fully-depleted cylindrical nanowire (CNW) MOSFETs accounting for quantum effects and, in doing so, we propose a new approach for the self-consistent solution of the Schroedinger-Poisson equations based on a rigorous time-independent perturbation approach. The strength of this method is that the Schroedinger equation is solved in a semi-analytical form, thus eliminating discretization errors and providing very accurate energy eigenvalues and eigenfunctions; furthermore, the computation time is cut down by an order of magnitude. A major result of this investigation is that the ON/OFF current ratio increases as the diameter of the CNW-MOSFET is scaled down. This makes them good candidates for an advanced low-leakage CMOS technology. The above technique is finally used to investigate the influence of high-k gate dielectrics on the electrostatics of CNW-MOSFETs, indicating that an improved performance is achieved, though not as large as one would expect from the k ratio. | |
| Data prodotto definitivo in UGOV: | 12-ott-2005 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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