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EnglishA number of experiments have recently appeared in the literature that extensively investigate the silicon-thickness dependence of the low-field carrier mobility in ultrathin-body silicon-on-insulator (SOI) MOSFETs. The aim of this paper is to develop a compact model, suited for implementation in device simulation tools, which accurately predicts the low-field mobility in SOI single- and double-gate MOSFETs with Si thicknesses down to 2.48 nm. Such a model is still missing in the literature, despite its importance to predict the performance of present and future devices based on ultrathin silicon layers.
| Titolo: | Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses | |
| Autore/i: | REGGIANI, SUSANNA; GNANI, ELENA; GNUDI, ANTONIO; RUDAN, MASSIMO; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2007 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TED.2007.902899 | |
| Abstract: | A number of experiments have recently appeared in the literature that extensively investigate the silicon-thickness dependence of the low-field carrier mobility in ultrathin-body silicon-on-insulator (SOI) MOSFETs. The aim of this paper is to develop a compact model, suited for implementation in device simulation tools, which accurately predicts the low-field mobility in SOI single- and double-gate MOSFETs with Si thicknesses down to 2.48 nm. Such a model is still missing in the literature, despite its importance to predict the performance of present and future devices based on ultrathin silicon layers. | |
| Data prodotto definitivo in UGOV: | 2007-10-16 17:05:32 | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/11585/47980
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