A number of experiments have recently appeared in the literature that extensively investigate the silicon-thickness dependence of the low-field carrier mobility in ultrathin-body silicon-on-insulator (SOI) MOSFETs. The aim of this paper is to develop a compact model, suited for implementation in device simulation tools, which accurately predicts the low-field mobility in SOI single- and double-gate MOSFETs with Si thicknesses down to 2.48 nm. Such a model is still missing in the literature, despite its importance to predict the performance of present and future devices based on ultrathin silicon layers.
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses / S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G. Baccarani. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 54:(2007), pp. 2204-2212. [10.1109/TED.2007.902899]
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses
REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;RUDAN, MASSIMO;BACCARANI, GIORGIO
2007
Abstract
A number of experiments have recently appeared in the literature that extensively investigate the silicon-thickness dependence of the low-field carrier mobility in ultrathin-body silicon-on-insulator (SOI) MOSFETs. The aim of this paper is to develop a compact model, suited for implementation in device simulation tools, which accurately predicts the low-field mobility in SOI single- and double-gate MOSFETs with Si thicknesses down to 2.48 nm. Such a model is still missing in the literature, despite its importance to predict the performance of present and future devices based on ultrathin silicon layers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
