A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the buffer layers. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.
Cornigli, D., Monti, F., Reggiani, S., Gnani, E., Gnudi, A., Baccarani, G. (2015). Leakage current and breakdown of GaN-on-Silicon vertical structures. Institute of Electrical and Electronics Engineers Inc. [10.1109/ULIS.2015.7063764].
Leakage current and breakdown of GaN-on-Silicon vertical structures
CORNIGLI, DAVIDE;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2015
Abstract
A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the buffer layers. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
