A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the buffer layers. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.

Leakage current and breakdown of GaN-on-Silicon vertical structures

CORNIGLI, DAVIDE;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2015

Abstract

A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the buffer layers. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.
EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
25
28
Cornigli, D.; Monti, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/521275
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