The impact of semiconductor/oxide interface traps (ITs) on the turn-on characteristics of tunnel field-effect transistors (TFETs) is carefully investigated through TCAD. IT density is treated as a 2-D continuum. Both a conventional and an advanced nanowire TFET, designed to fulfill ITRS specs, are addressed. Surprisingly, in conventional TFETs, high concentrations of acceptor-like ITs can suppress device ambipolarity, thus reducing transistor's OFF-state current.
Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani (2013). Can Interface Traps Suppress TFET Ambipolarity?. IEEE ELECTRON DEVICE LETTERS, 34(12), 1557-1559 [10.1109/LED.2013.2284290].
Can Interface Traps Suppress TFET Ambipolarity?
BETTI BENEVENTI, GIOVANNI;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2013
Abstract
The impact of semiconductor/oxide interface traps (ITs) on the turn-on characteristics of tunnel field-effect transistors (TFETs) is carefully investigated through TCAD. IT density is treated as a 2-D continuum. Both a conventional and an advanced nanowire TFET, designed to fulfill ITRS specs, are addressed. Surprisingly, in conventional TFETs, high concentrations of acceptor-like ITs can suppress device ambipolarity, thus reducing transistor's OFF-state current.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
