The impact of semiconductor/oxide interface traps (ITs) on the turn-on characteristics of tunnel field-effect transistors (TFETs) is carefully investigated through TCAD. IT density is treated as a 2-D continuum. Both a conventional and an advanced nanowire TFET, designed to fulfill ITRS specs, are addressed. Surprisingly, in conventional TFETs, high concentrations of acceptor-like ITs can suppress device ambipolarity, thus reducing transistor's OFF-state current.

Can Interface Traps Suppress TFET Ambipolarity?

BETTI BENEVENTI, GIOVANNI;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2013

Abstract

The impact of semiconductor/oxide interface traps (ITs) on the turn-on characteristics of tunnel field-effect transistors (TFETs) is carefully investigated through TCAD. IT density is treated as a 2-D continuum. Both a conventional and an advanced nanowire TFET, designed to fulfill ITRS specs, are addressed. Surprisingly, in conventional TFETs, high concentrations of acceptor-like ITs can suppress device ambipolarity, thus reducing transistor's OFF-state current.
Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/238891
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