BETTI BENEVENTI, GIOVANNI
BETTI BENEVENTI, GIOVANNI
Collaboratori
A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics
2015 Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools
2015 Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening
2015 BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current
2014 BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
Boosting InAs TFET on-current above 1 mA/um with no leakage penalty
2013 BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
Can Interface Traps Suppress TFET Ambipolarity?
2013 Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics | Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, Alireza; Colla... espandi | 2015-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools | Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Coll... espandi | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening | BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio | 2015-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | PP Optimization_of_a_Pocketed_Dual.pdf |
| Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current | BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio | 2014-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Boosting InAs TFET on-current above 1 mA/um with no leakage penalty | BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio | 2013-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| Can Interface Traps Suppress TFET Ambipolarity? | Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani | 2013-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |