In this work, an InAs Tunnel Field-Effect-Transistor (TFET) is carefully optimized by TCAD simulations. The device is able to provide on-state currents in the mA/m range at a reduced supply voltage of 0.5 V, while keeping the off-state currents below the ITRS specs for HP and LOP devices. Next, the designed TFET is benchmarked with respect to the ITRS specs for advanced multigate transistors projected to year 2020.
BETTI BENEVENTI, G., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G. (2013). Boosting InAs TFET on-current above 1 mA/um with no leakage penalty. IEEE Computer Society [10.1109/ESSDERC.2013.6818822].
Boosting InAs TFET on-current above 1 mA/um with no leakage penalty
BETTI BENEVENTI, GIOVANNI;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2013
Abstract
In this work, an InAs Tunnel Field-Effect-Transistor (TFET) is carefully optimized by TCAD simulations. The device is able to provide on-state currents in the mA/m range at a reduced supply voltage of 0.5 V, while keeping the off-state currents below the ITRS specs for HP and LOP devices. Next, the designed TFET is benchmarked with respect to the ITRS specs for advanced multigate transistors projected to year 2020.File in questo prodotto:
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