A simple analytical low-field electron mobility model to be employed for technology computer-aided design of thin-body MOSFETs based on III-V compound semiconductors is presented. The scattering sources accounted for in the model are Coulomb centers, lattice vibrations (i.e., phonons), and surface roughness. The dependence of the thin-body effective thickness on the transverse electric field is calculated through 1-D Schrödinger-Poisson numerical simulations and is introduced in the model by means of an appropriate analytical function. Then, the free-electron density distribution is determined by considering both quantization effects and oxide-semiconductor interface traps. The model is calibrated on the experimental data collected on In0.53Ga0.47AS-on-InP thin-body MOSFETs featuring body thicknesses as low as 5 nm. In particular, the model accurately reproduces CG-VGS characteristics, effective mobility against inversion layer charge plots, and IDS-VGS curves at low VDS.
Betti Beneventi, G., Reggiani, S., Gnudi, A., Gnani, E., Alian, A., Collaert, N., et al. (2015). A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(11), 3645-3652 [10.1109/TED.2015.2478847].
A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics
BETTI BENEVENTI, GIOVANNI;REGGIANI, SUSANNA;GNUDI, ANTONIO;GNANI, ELENA;BACCARANI, GIORGIO
2015
Abstract
A simple analytical low-field electron mobility model to be employed for technology computer-aided design of thin-body MOSFETs based on III-V compound semiconductors is presented. The scattering sources accounted for in the model are Coulomb centers, lattice vibrations (i.e., phonons), and surface roughness. The dependence of the thin-body effective thickness on the transverse electric field is calculated through 1-D Schrödinger-Poisson numerical simulations and is introduced in the model by means of an appropriate analytical function. Then, the free-electron density distribution is determined by considering both quantization effects and oxide-semiconductor interface traps. The model is calibrated on the experimental data collected on In0.53Ga0.47AS-on-InP thin-body MOSFETs featuring body thicknesses as low as 5 nm. In particular, the model accurately reproduces CG-VGS characteristics, effective mobility against inversion layer charge plots, and IDS-VGS curves at low VDS.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
