A simple analytical model of thin-body In0.53Ga0.47As-on-InP MOSFET low-field electron mobility suitable for integration in Technology-CAD (TCAD) tools is presented. Phonon, Coulomb and surface roughness scattering are accounted for. In order to characterize the phonon scattering contribution, an expression for the device effective thickness is derived from 1-D Schroedinger-Poisson simulations. The model is validated through comparison with experimental CG-Vgs and Id-Vgs curves collected on transistors with body thicknesses down to 5 nm.

Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools

BETTI BENEVENTI, GIOVANNI;REGGIANI, SUSANNA;GNUDI, ANTONIO;GNANI, ELENA;BACCARANI, GIORGIO
2015

Abstract

A simple analytical model of thin-body In0.53Ga0.47As-on-InP MOSFET low-field electron mobility suitable for integration in Technology-CAD (TCAD) tools is presented. Phonon, Coulomb and surface roughness scattering are accounted for. In order to characterize the phonon scattering contribution, an expression for the device effective thickness is derived from 1-D Schroedinger-Poisson simulations. The model is validated through comparison with experimental CG-Vgs and Id-Vgs curves collected on transistors with body thicknesses down to 5 nm.
EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
241
244
Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/521333
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