A simple analytical model of thin-body In0.53Ga0.47As-on-InP MOSFET low-field electron mobility suitable for integration in Technology-CAD (TCAD) tools is presented. Phonon, Coulomb and surface roughness scattering are accounted for. In order to characterize the phonon scattering contribution, an expression for the device effective thickness is derived from 1-D Schroedinger-Poisson simulations. The model is validated through comparison with experimental CG-Vgs and Id-Vgs curves collected on transistors with body thicknesses down to 5 nm.
Betti Beneventi, G., Reggiani, S., Gnudi, A., Gnani, E., Aliane, A., Collaert, N., et al. (2015). Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools. Institute of Electrical and Electronics Engineers Inc. [10.1109/ULIS.2015.7063818].
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools
BETTI BENEVENTI, GIOVANNI;REGGIANI, SUSANNA;GNUDI, ANTONIO;GNANI, ELENA;BACCARANI, GIORGIO
2015
Abstract
A simple analytical model of thin-body In0.53Ga0.47As-on-InP MOSFET low-field electron mobility suitable for integration in Technology-CAD (TCAD) tools is presented. Phonon, Coulomb and surface roughness scattering are accounted for. In order to characterize the phonon scattering contribution, an expression for the device effective thickness is derived from 1-D Schroedinger-Poisson simulations. The model is validated through comparison with experimental CG-Vgs and Id-Vgs curves collected on transistors with body thicknesses down to 5 nm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
